4G/5G Low Noise Amplifiers

Infineon Technologies 4G/5G Low Noise Amplifiers are designed for LTE and 5G, covering a wide frequency range. The 4G/5G Low Noise Amplifiers gain step features the gain and linearity that can adjust to increase the dynamic system range and accommodate changing interference scenarios.

Mga Resulta: 5
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Frequency ng Pagpapatakbo Supply Voltage ng Pagpapatakbo Supply Current ng Pagpapatakbo Gain NF - Noise Figure Uri Isitilo ng Mounting Package / Case Teknolohiya P1dB - Compression Point OIP3 - Third Order Intercept Minimum na Operating Temperature Maximum na Operating Temperature Packaging
Infineon Technologies RF Amplifier RF MMIC 3 TO 6 GHZ 11,542May Stock
Min.: 1
Mult.: 1
Reel: 15,000
1.4 GHz to 2.7 GHz 1.8 V 5.8 mA 20.2 dB 11.5 dB Low Noise Amplifiers SMD/SMT TSNP-9-2 Si - 17 dBm Reel, Cut Tape
Infineon Technologies RF Amplifier 7x LNA Bank with Output Cross-Switch for 5G 4,500May Stock
Min.: 1
Mult.: 1
Reel: 5,000

600 MHz to 2.7 GHz 1.2 V, 1.8 V 21 dB 0.8 dB SMD/SMT PG-WF2BGA-50-2 Reel, Cut Tape
Infineon Technologies RF Amplifier RF MMIC 3 TO 6 GHZ 7,445May Stock
Min.: 1
Mult.: 1
Reel: 12,000

2.3 GHz to 2.7 GHz 1.1 V to 3.3 V 2.2 mA 20.3 dB 0.6 dB General Purpose Amplifiers SMD/SMT TSNP-6-10 Si - 17 dBm - 7 dBm - 40 C + 85 C Reel, Cut Tape, MouseReel
Infineon Technologies RF Amplifier RF MMIC 3 TO 6 GHZ Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 12,000
Mult.: 12,000
Reel: 12,000

4.4 GHz to 5 GHz 1.1 V to 2 V 5.6 mA 19 dB 1 dB Low Noise Amplifiers SMD/SMT SiGe - 19 dBm - 7 dBm - 30 C + 85 C Reel
Infineon Technologies RF Amplifier RF MMIC 3 TO 6 GHZ Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 12,000
Mult.: 12,000
Reel: 12,000

3.3 GHz to 4.2 GHz 1.1 V to 2 V 5.8 mA 21 dB 0.75 dB Low Noise Amplifiers SMD/SMT SiGe - 18 dBm - 7 dBm - 30 C + 85 C Reel