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Pumili Larawan # ng Piyesa
 Mfr.
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Dami RoHS ECAD Model Teknolohiya
Isitilo ng Mounting
Package / Case
Polarity ng Transistor
Dami ng Channel
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum na Operating Temperature
Maximum na Operating Temperature
Pd - Power Dissipation
Channel Mode
Pangalang pangkalakal
Packaging
Infineon Technologies IPP020N08N5XKSA1
Infineon Technologies MOSFETs IFX FET > 60-80V
Datasheet
Lead-Time para sa Hindi Naka-stock 13 (na) Linggo
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2 mOhms - 20 V, 20 V 3.8 V 178 nC - 55 C + 175 C 375 W Enhancement Tube
Infineon Technologies IPP023N08N5XKSA1
Infineon Technologies MOSFETs IFX FET > 60-80V
Datasheet
Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2.3 mOhms - 20 V, 20 V 3.8 V 133 nC - 55 C + 175 C 300 W Enhancement Tube