STGWA75H65DFB2

STMicroelectronics
511-STGWA75H65DFB2
STGWA75H65DFB2

Mfr.:

Paglalarawan:
IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long

ECAD Model:
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Availability

Stock:
0

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Lead-Time ng Pabrika:
14 (na) Linggo Tinatayang oras ng paggawa sa pabrika.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱299.86 ₱299.86
₱168.20 ₱1,682.00
₱117.74 ₱11,774.00
₱110.78 ₱66,468.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
STMicroelectronics
Kategorya ng Produkto: Mga IGBT
RoHS:  
TO-247-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
115 A
375 W
- 55 C
+ 175 C
Tube
Brand: STMicroelectronics
Gate-Emitter Leakage Current: 250 nA
Uri ng Produkto: IGBT Transistors
Dami ng Pack ng Pabrika: 600
Subcategory: IGBTs
Timbang ng Unit: 6.100 g
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Mga Piniling Attribute: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

STGWA75H65DFB2 HB2 IGBT

STMicroelectronics STGWA75H65DFB2 HB2 IGBT is an evolution of the advanced proprietary trench gate field-stop structure. The HB2 series optimizes conduction with premium VCE(sat) at low current values and reduced switching energy. The STGWA75H65DFB2 HB2 IGBT features a low VCE(sat) of 1.55V (typical) at an IC of 75A.

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.