MIKROE-4696

Mikroe
932-MIKROE-4696
MIKROE-4696

Mfr.:

Paglalarawan:
Power Management IC Development Tools H-Bridge Driver click

Availability

Stock:
Hindi Naka-stock
Lead-Time ng Pabrika:
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱1,972.00 ₱1,972.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Mikroe
Kategorya ng Produkto: Mga Tool sa Pag-develop ng Power Management IC
RoHS:  
Add-On Boards
Gate Driver
3.3 V to 5 V
MC33883
Brand: Mikroe
Uri ng Interface: GPIO
Maximum na Operating Temperature: + 125 C
Minimum na Operating Temperature: - 40 C
Uri ng Produkto: Power Management IC Development Tools
Dami ng Pack ng Pabrika: 1
Subcategory: Development Tools
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Mga Piniling Attribute: 0

USHTS:
8537109170
TARIC:
8473302000
ECCN:
EAR99

Click Boards™

MikroElektronika MikroBUS™ Adapter click boards™ are designed to revolutionize the way users add new functionality to development boards. The user can push a click board into the innovative new MikroBUS™ standard socket and use it with zero hardware configuration. Categories of MikroElektronika mikroBUS™ Adapter click boards include Wireless Communication Modules, Wired Communication Modules, Sensor Modules, and Miscellaneous Modules & Accessories.

Motor Control Click Boards

Mikroe Motor Control Click Boards control motors for applications and designs. Mikroe Click Boards are based around the mikroBUS™ interface standard and easily add incredible system capabilities. The devices are ideal for any motor control application. 

H-Bridge Driver Click

Mikroe H-Bridge Driver Click features the NXP Semiconductors MC33883 H-Bridge gate driver with an integrated charge pump and independent high and low side gate drive channels. The gate driver channels are independently controlled by four separate input pins. This allows the device to be optionally configured as two independent high side gate drivers and two independent low side gate drivers. Gate driver outputs can source and sink up to 1.0A peak current pulses. This permits large gate-charge MOSFETs to be driven and/or high pulse-width modulation (PWM) frequencies to be utilized.