CoolGaN™ Drive HB 600V G5 Switches

Infineon Technologies CoolGaN™ Drive HB 600V G5 Switches integrate a half-bridge power stage featuring two 600V enhancement-mode CoolGaN switches with on-resistance options of 140mΩ, 270mΩ, or 500mΩ. These switches include built-in gate drivers and come in a compact 6mm × 8mm TFLGA-27 package. Designed for low-/medium-power applications, these switches are ideal for high-density motor drives and switch-mode power supplies (SMPS), leveraging the superior switching performance of CoolGaN technology. Infineon’s CoolGaN switches feature a robust gate structure that ensures minimal on-resistance when driven by a continuous gate current of just a few milliamps in the “on” state.

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Infineon Technologies GaN FETs 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
Datasheet
2,352May Stock
Min.: 1
Mult.: 1
: 3,000

SMD/SMT TFLGA-27 170 mOhms - 40 C + 150 C CoolGaN
Infineon Technologies GaN FETs 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
Datasheet
2,371May Stock
Min.: 1
Mult.: 1
: 3,000

SMD/SMT TFLGA-27 170 mOhms - 40 C + 150 C CoolGaN
Infineon Technologies GaN FETs 500 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
Datasheet
2,082May Stock
Min.: 1
Mult.: 1
: 3,000

SMD/SMT TFLGA-27 170 mOhms - 40 C + 150 C CoolGaN
Infineon Technologies GaN FETs CoolGaN Drive HB 600 V G5
Datasheet
45May Stock
3,000Inaasahan 7/9/2026
Min.: 1
Mult.: 1
: 3,000
SMD/SMT TFLGA-27 - 40 C + 150 C CoolGaN