3.3V Single Data Rate (SDR) Synchronous DRAM

ISSI 3.3V Single Data Rate (SDR) Synchronous DRAM provides a wide selection of SDR SDRAM with densities from 16Mbit to 512Mbit in 1Mx16, 4Mx16, and 8Mx16 organizations. Each device features a single supply voltage (3.3V +/-0.3V), standard SDRAM clock timing, LVTTL compatible inputs, programmable burst length of 1, 2, 4, 8, or full page, auto-refresh and self-refresh modes. ISSI 3.3V SDR Synchronous DRAM has a programmable CAS latency of 2 or 3. Typical applications for these devices include wireless access points, base stations, routers, network storage, energy management, industrial controls, car infotainment, and automotive telematics.

Mga Resulta: 86
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Uri Laki ng Memory Lapad ng Data Bus Maximum na Clock Frequency Package / Case Organisasyon Oras ng Pag-access Supply Voltage - Min Supply Voltage - Max Minimum na Operating Temperature Maximum na Operating Temperature Series Packaging
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS 138May Stock
Min.: 1
Mult.: 1
Max.: 17

SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800J Tray
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 166Mhz,RoHS 339May Stock
Min.: 1
Mult.: 1
Max.: 5

SDRAM 16 Mbit 16 bit 166 MHz BGA-60 1 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16100H
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 143Mhz,RoHS 769May Stock
Min.: 1
Mult.: 1
Max.: 139

SDRAM 16 Mbit 16 bit 143 MHz TSOP-II-50 1 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16100H Tray
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 143Mhz,RoHS 100May Stock
585Inaasahan 4/17/2026
Min.: 1
Mult.: 1
Max.: 151

SDRAM 16 Mbit 16 bit 143 MHz TSOP-II-50 1 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16100H Tray
ISSI DRAM 256M 16Mx16 166Mhz SDR SDRAM, 3.3V 443May Stock
Min.: 1
Mult.: 1
Max.: 4

SDRAM 256 Mbit 16 bit 166 MHz BGA-54 16 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16160G Tray
ISSI DRAM 64M, 3.3V, M-SDRAM 2Mx32, 133Mhz, RoHS 283May Stock
Min.: 1
Mult.: 1
Max.: 5

SDRAM Mobile 64 Mbit 16 bit 133 MHz FBGA-54 4 M x 16 5.5 ns 3 V 3.6 V - 40 C + 85 C IS42SM16400M
ISSI DRAM 64M, 3.3V, SDRAM, 4Mx16, 166Mhz, 54 pin TSOP II RoHS 53May Stock
108Inaasahan 4/20/2026
Min.: 1
Mult.: 1
Max.: 32

SDRAM 64 Mbit 16 bit 166 MHz TSOP-II-54 4 M x 16 5.4 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 64M, 3.3V, SDRAM, 2Mx32, 143Mhz, 86 pin TSOP II (400 mil) RoHS 53May Stock
Min.: 1
Mult.: 1
Max.: 200

SDRAM 64 Mbit 32 bit 143 MHz TSOP-II-86 2 M x 32 5.4 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R 3May Stock
Min.: 1
Mult.: 1
Reel: 2,500

SDRAM 512 Mbit 32 bit 167 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Reel, Cut Tape, MouseReel
ISSI DRAM 256M 16Mx16 143Mhz SDR SDRAM, 3.3V
348Inaasahan 3/9/2026
Min.: 1
Mult.: 1
Max.: 91

SDRAM 256 Mbit 16 bit 143 MHz BGA-54 16 M x 16 5.5 ns 3 V 3.6 V 0 C + 70 C IS42S16160G Tray
ISSI DRAM 64M, 3.3V, SDRAM, 4Mx16, 143Mhz, 54 pin TSOP II RoHS, IT
1,219Inoorder
Min.: 1
Mult.: 1
Max.: 276

SDRAM 64 Mbit 16 bit 143 MHz TSOP-II-54 4 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
1,440Inaasahan 4/17/2026
Min.: 1
Mult.: 1
Max.: 615

SDRAM 64 Mbit 32 bit 166 MHz BGA-90 2 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 64M, 3.3V, SDRAM, 4Mx16, 143 Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
347Inaasahan 5/8/2026
Min.: 1
Mult.: 1
Max.: 200

SDRAM 64 Mbit 16 bit 143 MHz BGA-54 4 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 64M, 3.3V, SDRAM, 2Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
240Inaasahan 4/17/2026
Min.: 1
Mult.: 1
Max.: 50

SDRAM 64 Mbit 32 bit 143 MHz BGA-90 2 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 pin Copper TSOP II (400 mil) RoHS, IT, T&R Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 1,500
Mult.: 1,500
Reel: 1,500

SDRAM 512 Mbit 16 bit 167 MHz TSOP-II-54 32 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16320F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 pin Copper TSOP II (400 mil) RoHS, T&R Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 1,500
Mult.: 1,500
Reel: 1,500

SDRAM 512 Mbit 16 bit 167 MHz TSOP-II-54 32 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16320F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS, T&R Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SDRAM 512 Mbit 32 bit 167 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz at CL2 , 90 ball BGA (8mmx13mm) RoHS, IT Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 240
Mult.: 240

SDRAM 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz at CL2 , 86 pin TSOP II, RoHS, IT Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 108
Mult.: 108
Reel: 108

SDRAM 512 Mbit 32 bit 133 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500
SDRAM 512 Mbit 32 bit 167 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SDRAM 512 Mbit 32 bit 167 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F Reel
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 133Mhz at CL2, 90 ball BGA (8mmx13mm) RoHS, IT Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 240
Mult.: 240

SDRAM 256 Mbit 32 bit 133 MHz BGA-90 8 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J Reel
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 133Mhz at CL2, 86 pin TSOP II RoHS Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 1
Mult.: 1
SDRAM 256 Mbit 32 bit 133 MHz TSOP-II-86 8 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32800J
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 133Mhz at CL2, 86 pin TSOP II RoHS, IT Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 1
Mult.: 1

SDRAM 256 Mbit 32 bit 133 MHz TSOP-II-86 8 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J
ISSI DRAM 512M, 3.3V, SDRAM, 64Mx8, 166Mhz, 54 pin TSOP II RoHS, IT, T&R Lead-Time para sa Hindi Naka-stock 6 (na) Linggo
Min.: 1,500
Mult.: 1,500
Reel: 1,500

SDRAM 512 Mbit 8 bit 167 MHz TSOP-II-54 64 M x 8 6 ns 3 V 3.6 V - 40 C + 85 C IS42S86400F Reel