RF3L05150CB4

STMicroelectronics
511-RF3L05150CB4
RF3L05150CB4

Mfr.:

Paglalarawan:
RF MOSFET Transistors 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor

ECAD Model:
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Availability

Stock:
Hindi Naka-stock
Lead-Time ng Pabrika:
Matagal na lead time na iniulat sa produktong ito.
Minimum: 100   Mga Multiple: 100
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
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Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
Buo Reel (Mag-order sa multiple ng 100)
₱8,655.92 ₱865,592.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
STMicroelectronics
Kategorya ng Produkto: Mga RF MOSFET Transistor
RoHS:  
N-Channel
Si
2.5 A
28 V
1 Ohms
945 MHz
16 dB
150 W
+ 200 C
Through Hole
LBB-4
Reel
Brand: STMicroelectronics
Dami ng Channel: 1 Channel
Uri ng Produkto: RF MOSFET Transistors
Dami ng Pack ng Pabrika: 100
Subcategory: MOSFETs
Uri: RF Power MOSFET
Timbang ng Unit: 2.400 g
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Mga Piniling Attribute: 0

USHTS:
8541290055
TARIC:
8541290000
ECCN:
EAR99

RF3L05150CB4 RF Power LDMOS Transistor

STMicroelectronics RF3L05150CB4 RF Power LDMOS Transistor is a 150W, 28/32V LDMOS FET designed for wide-band communication and ISM applications. The STM RF3L05150CB4 LDMOS Transistor is designed for applications with frequencies from HF to 1GHz. The RF3L05150CB4 can be used in class AB, B, or C for all typical modulation formats.

LET RF Power Transistors

STMicroelectronics LET RF Power Transistors are a common source N-Channel enhancement-mode lateral field-effect RF power transistor. These transistors are based on the new advanced STH5P LDMOS technology and are targeted for operation up to 2.0GHz. STMicroelectronics LET RF Power Transistors are specifically designed for 28V (cellular base stations) and 32/36V (avionics) applications. These devices have a significant improvement in terms of RF performance (+3dB gain, +15% efficiency), ruggedness, and reliability makes this new product line ideal in applications such as private mobile radio, government communications, avionics systems, and L-band satellite uplink equipment.