TRSx SiC Schottky Barrier Diodes

Toshiba TRSx SiC Schottky Barrier Diodes are a 3rd generation chip design with a repetitive peak reverse voltage (VRRM) rating of 1200V. The forward DC current rating (IF(DC)) for the TRS30N120HB is 15A per leg or 30A for both legs, and the TRS40N120HB is 20A per leg or 40A for both legs. These devices are available in a standard TO-247 package. Toshiba TRSx Sic Schottky Barrier Diodes are ideal in power factor correction, solar inverters, uninterruptible power supplies, and DC-DC converter applications.

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Dami RoHS ECAD Model Isitilo ng Mounting
Package / Case
Kumpigurasyon
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum na Operating Temperature
Toshiba SiC Schottky Diodes 1200 V/30 A SiC Schottky Barrier Diode, TO-247
Datasheet
30May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 Common Cathode 82 A 1.2 kV 1.27 V 1.88 kA 1.4 uA + 175 C
Toshiba SiC Schottky Diodes 1200 V/40 A SiC Schottky Barrier Diode, TO-247
Datasheet
24May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 Common Cathode 102 A 1.2 kV 1.27 V 2.16 kA 1.8 uA + 175 C