Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

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Microchip Technology SiC MOSFETs MOSFET SIC 1700 V 750 mOhm TO-247
Datasheet
989Inaasahan 8/10/2026
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole TO-247-3
Microchip Technology SiC Schottky Diodes 700 V, 20 A SiC SBD
Datasheet
Lead-Time 14 (na) Linggo
Min.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-220-2
Microchip Technology SiC MOSFETs MOSFET SIC 1200 V 40 mOhm TO-247-4
Datasheet
Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Microchip Technology SiC Schottky Diodes 700V, 50A SiC SBD
Datasheet
Lead-Time 14 (na) Linggo
Min.: 1
Mult.: 1

SiC Schottky Diodes SMD/SMT D3PAK
Microchip Technology Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SOT227
Datasheet
Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 14
Mult.: 1

Discrete Semiconductor Modules SiC Screw Mount SOT-227
Microchip Technology SiC Schottky Diodes SIC SBD 700 V 10 A TO-268
Datasheet
Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 270
Mult.: 30

SiC Schottky Diodes SMD/SMT TO-268-3
Microchip Technology SiC Schottky Diodes SIC SBD 1200 V 15 A TO-220
Datasheet
Lead-Time para sa Hindi Naka-stock 15 (na) Linggo
Min.: 150
Mult.: 50

SiC Schottky Diodes Through Hole TO-220-2
Microchip Technology SiC Schottky Diodes SIC SBD 1200 V 20 A TO-220
Datasheet
Lead-Time para sa Hindi Naka-stock 15 (na) Linggo
Min.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-220-2