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XPN12006NC,L1XHQ

Name: Toshiba XPN12006NC,L1XHQ
Brand: Toshiba
SKU: 757-XPN12006NCL1XHQ
Price: 102.66 PHP
Availability: InStock

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Mouser #:

757-XPN12006NCL1XHQ

Mfr. #:

XPN12006NC,L1XHQ

Mfr.:

Toshiba

Paglalarawan:

MOSFETs TSON N-CH 60V 20A

Datasheet:

XPN12006NC,L1XHQ Datasheet (PDF)

ECAD Model:

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Higit Pang Impormasyon

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May Stock: 56,524

Stock:: 56,524 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 20 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱102.66	₱102.66
	₱61.48	₱614.80
	₱41.70	₱4,170.00
	₱34.05	₱17,025.00
	₱31.55	₱31,550.00
	₱31.03	₱77,575.00
Buo Reel (Mag-order sa multiple ng 5000)
	₱27.09	₱135,450.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Toshiba
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	TSON-8
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	23.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	23 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	65 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	8 ns
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	5 ns
Dami ng Pack ng Pabrika:	5000
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	33 ns
Karaniwang Tagal ng Delay ng Pag-on:	15 ns
Timbang ng Unit:	20 mg

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Mga Piniling Attribute: 0

I-filter ang Dokumento:

Datasheet

XPN12006NC,L1XHQ Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Automotive U-MOSVIII-H Power MOSFETs

Toshiba Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. These devices feature low on-resistance with proprietary technology using a Cu connector. The Toshiba U-MOSVIII-H Power MOSFETs have a narrowed gate threshold voltage range of 2.5V to 3.5V, which reduces switching time tolerance.

XPN12006NC Automotive U-MOSVIII-H MOSFETs

Toshiba XPN12006NC Automotive U-MOSVIII-H MOSFETs are AEC-Q101 qualified in a compact, thin TSON package. The XPN12006NC features low drain-source on-resistance, low leakage current, and an enhancement mode.

Automotive Devices

Toshiba Automotive Devices offer an extensive lineup of MOSFETs, optical isolation, transistors, and diodes, to cover various automotive applications in 12V to 48V battery systems. In addition, Toshiba offers automotive-grade motor control drivers. Toshiba automotive devices are AEC-Q100 and AEC-Q101 qualified.

Automotive AEC-Q101 Qualified Power MOSFETs

Toshiba Automotive AEC-Q101 Qualified Power MOSFETs is an extensive lineup of Power MOSFETs covering various automotive applications in 12V to 48V battery systems. Toshiba has been in the discrete automotive industry since the 1960s, starting with rectifiers and then Automotive MOSFETs in the 1990s. With performance and reliability, all of Toshiba’s automotive products go above and beyond AEC-Q101 standards.