Mga Resulta: 4
Pumili Larawan # ng Piyesa
 Mfr.
Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami.
Dami RoHS ECAD Model Teknolohiya
Isitilo ng Mounting
Package / Case
Polarity ng Transistor
Dami ng Channel
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum na Operating Temperature
Maximum na Operating Temperature
Pd - Power Dissipation
Channel Mode
Pangalang pangkalakal
Packaging
Infineon Technologies MOSFETs HIGH POWER_LEGACY
Datasheet
Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 1
Mult.: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 31.2 A 257 mOhms - 20 V, 20 V 4 V 118 nC - 55 C + 150 C 277.8 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_LEGACY
Datasheet
Lead-Time para sa Hindi Naka-stock 17 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 1 Channel 650 V 22.4 A 351 mOhms - 20 V, 20 V 4 V 8 nC - 55 C + 150 C 34.7 W Tube
Infineon Technologies MOSFETs HIGH POWER_LEGACY
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17.5 A 190 mOhms - 20 V, 20 V 3.5 V 68 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_LEGACY
Datasheet
Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 43.3 A 80 mOhms - 20 V, 20 V 4 V 167 nC - 55 C + 150 C 391 W Enhancement Tube