QPD1035 GaN RF Power Transistors

Qorvo QPD1035 GaN RF Power Transistors are 40W discrete GaN on SiC HEMTs operating from DC to 6GHz with a 50V supply. The Qorvo QPD1035 transistors feature an input pre-match, making it ideal for broadband amplifiers in pulsed and CW operations. The devices are lead-free and RoHS-compliant.

Mga Resulta: 2
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation
Qorvo GaN FETs 30W, DC - 6GHz 46May Stock
Min.: 1
Mult.: 1
Reel: 50

Flanged - 40 C + 85 C 50.4 W
Qorvo GaN FETs 30W, DC - 6GHz, Flanged
100Inoorder
Min.: 1
Mult.: 1
Reel: 50

Flanged - 40 C + 85 C 50.4 W