DXTN69060C 60V NPN Ultra-Low VCE(SAT) Transistors
Diodes Incorporated DXTN69060C 60V NPN Ultra-Low VCE(SAT) Transistor features a proprietary structure for achieving ultra-low VCE(SAT) performance and lower operating temperatures, minimizing thermal management needs and enhancing long-term reliability. The Diodes Incorporated DXTN69060C specifications include a breakdown voltage (BVCEO) of over 60V, continuous collector current of 5.5A, and a low saturation voltage of less than 45mV at 1A. With a high current RCE(sat) typical at 24mΩ, hFE characterization up to 6A, 2W power dissipation, and fast switching with short storage time, this transistor is designed for efficient, reliable performance in high-power applications.
