MURT400x Silicon Super Fast Recovery Diodes

GeneSiC Semiconductor MURT400x silicon super fast recovery diodes provide high surge capability and repetitive peak reverse voltage of up to 600V. GeneSiC MURT400x silicon super fast recovery diodes come in a three tower package and feature continuous forward current of 400A. These GeneSiC Semiconductor silicon super fast recovery diodes provide an operating temperature of -40ºC to +175°C.

Mga Resulta: 2
Pumili Larawan # ng Piyesa
 Mfr.
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Dami RoHS ECAD Model Isitilo ng Mounting
Package / Case
Vr - Reverse Voltage
If - Forward Current
Uri
Kumpigurasyon
Vf - Forward Voltage
Minimum na Operating Temperature
Maximum na Operating Temperature
Series
Packaging
GeneSiC Semiconductor Diode Modules 600V 400A Si Super Fast Recovery
Datasheet
3May Stock
Min.: 1
Mult.: 1

Screw Mount Three Tower Iso 600 V 400 A Super Fast Recovery Dual-Common Cathode 1.7 V - 55 C + 150 C Bulk
GeneSiC Semiconductor Diode Modules 400V 400A Super Fast Recovery
Datasheet
Lead-Time para sa Hindi Naka-stock 10 (na) Linggo
Min.: 40
Mult.: 40

SMD/SMT Three Tower 400 V 400 A Super Fast Recovery 1.35 V - 55 C + 150 C MURT400 Bulk