950V CoolMOS™ PFD7 SJ MOSFETs

Infineon Technologies 950V CoolMOS™ PFD7 SJ MOSFETs offer super junction (SJ) technologies. The SJ technology is ideal for lighting and industrial SMPS applications by incorporating best-in-class performance with state-of-the-art ease of use. The PFDJ provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge (Qrr).

Mga Resulta: 10
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Packaging
Infineon Technologies MOSFETs LOW POWER_NEW 2,000May Stock
Min.: 1
Mult.: 1
Reel: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 950 V 17.5 A 310 mOhms - 30 V, 30 V 3.5 V 61 nC - 55 C + 150 C 125 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs LOW POWER_NEW 958May Stock
Min.: 1
Mult.: 1
Reel: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 13.3 A 450 mOhms - 30 V, 30 V 3.5 V 43 nC - 55 C + 150 C 104 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_NEW 531May Stock
1,000Inaasahan 1/28/2027
Min.: 1
Mult.: 1
Reel: 1,000

Si SMD/SMT TO-263-3 N-Channel 1 Channel 950 V 36.5 A 130 mOhms - 20 V, 20 V 2.5 V 141 nC - 55 C + 150 C 227 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW 228May Stock
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 74.7 A 60 mOhms - 30 V, 30 V 3.5 V 315 nC - 55 C + 150 C 446 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 475May Stock
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 950 V 13.9 A 130 mOhms - 30 V, 30 V 3.5 V 141 nC - 55 C + 150 C 33 W Enhancement Tube
Infineon Technologies MOSFETs LOW POWER_NEW 500May Stock
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 950 V 7.2 A 450 mOhms - 30 V, 30 V 3.5 V 43 nC - 55 C + 150 C 30 W Enhancement Tube
Infineon Technologies MOSFETs LOW POWER_NEW 469May Stock
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 950 V 8.7 A 310 mOhms - 30 V, 30 V 3.5 V 61 nC - 55 C + 155 C 31 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 435May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 36.5 A 130 mOhms - 20 V, 20 V 2.5 V 141 nC - 55 C + 150 C 227 W Enhancement Tube


Infineon Technologies MOSFETs LOW POWER_NEW
1,200Inaasahan 5/4/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 17.5 A 310 mOhms - 30 V, 30 V 3.5 V 61 nC - 55 C + 150 C 125 W Enhancement Tube
Infineon Technologies MOSFETs LOW POWER_NEW
1,000Inaasahan 4/9/2026
Min.: 1
Mult.: 1
Reel: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 950 V 13.3 A 450 mOhms - 30 V, 30 V 3.5 V 43 nC - 55 C + 150 C 104 W Enhancement Reel, Cut Tape