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SCT4013DRC15

Name: ROHM Semiconductor SCT4013DRC15
Brand: ROHM Semiconductor
SKU: 755-SCT4013DRC15
Price: 2151.54 PHP
Availability: OutOfStock

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Mouser #:

755-SCT4013DRC15

Mfr. #:

SCT4013DRC15

Mfr.:

ROHM Semiconductor

Paglalarawan:

SiC MOSFETs TO247 750V 105A N-CH SIC

Datasheet:

SCT4013DRC15 Datasheet

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Availability

Stock:: 0

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Inoorder:: 450

Inaasahan 11/11/2026
Lead-Time ng Pabrika:: 27

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Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

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Ext. Presyo:

₱-.--

Est. Taripa:

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Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱2,151.54	₱2,151.54
	₱1,590.19	₱15,901.90

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	ROHM Semiconductor
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-4
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	105 A
Rds On - Drain-Source Resistance:	16.9 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	170 nC
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	312 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	17 ns
Forward Transconductance - Min:	32 S
Packaging:	Tube
Produkto:	MOSFET's
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	32 ns
Dami ng Pack ng Pabrika:	450
Subcategory:	Transistors
Teknolohiya:	SiC
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	82 ns
Karaniwang Tagal ng Delay ng Pag-on:	17 ns
Mga Alias ng # ng Piyesa :	SCT4013DR

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Datasheet

SCT4013DRC15 Datasheet

Specification Sheets

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Mga Kodigo sa Pagsunod

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Mga Klasipikasyon ng Pinagmulan

Bansang Pinagmulan:: United States
Bansang Pinagmulan ng Pag-assemble:: Hindi available
Bansa ng Diffusion:: Hindi available

Ang bansa ay maaaring magbago sa oras ng pagpapadala.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

SCT4013DR N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4013DR N-Channel Silicon Carbide (SiC) Power MOSFET is a high-performance device designed for demanding power electronics applications. Featuring a drain-source voltage rating of 750V and a 105A continuous drain current (at +25°C), this device offers exceptional efficiency and thermal performance. The low on-resistance of 13mΩ (typical) and fast switching characteristics make the ROHM SCT4013DR ideal for high-frequency applications such as power supplies, inverters, and motor drives. The SCT4013DR also benefits from the inherent advantages of SiC technology, including a high breakdown voltage, low switching losses, and superior thermal conductivity, which contribute to reduced system size and improved reliability. Packaged in a TO-247-4L case, the MOSFET supports robust thermal management and ease of integration into existing designs.

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.