Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

Mga Resulta: 49
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Pangalang pangkalakal Teknolohiya
Renesas Electronics GaN FETs 700V, 240mohm GaN FET in DPAK Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

SMD/SMT TO-252-3L N-Channel 1 Channel 700 V 8 A 312 mOhms 20 V 2.5 V 5.4 ns - 55 C + 150 C 31.2 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 5x6 PQFN Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 5,000
Mult.: 5,000
: 5,000

700 V SuperGaN GaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 3,000
Mult.: 3,000
: 3,000

700 V SuperGaN GaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 3,000
Mult.: 3,000
: 3,000

SMD/SMT PQFN-3 N-Channel 1 Channel 700 V 8 A 312 mOhms 20 V 2.5 V 5.4 nC - 55 C + 150 C 31.2 W Enhancement SuperGan GaN
Renesas Electronics GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 5,000
Mult.: 5,000
: 5,000

700 V SuperGaN GaN
Renesas Electronics GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 5,000
Mult.: 5,000
: 5,000

700 V SuperGaN GaN
Renesas Electronics GaN FETs 700V, 480mohm GaN FET in DPAK Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

SMD/SMT TO-252-3L N-Channel 1 Channel 700 V 5 A 560 mOhms 20 V 2.5 V 5.2 nC - 55 C + 150 C 25 W Enhanecement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 150mohm GaN FET in 8x8 PQFN Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 3,000
Mult.: 3,000
: 3,000

SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 14.2 A 180 mOhms 20 V 2 V 14 nC - 55 C + 150 C 62.5 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 300mohm GaN FET in 8x8 PQFN Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 3,000
Mult.: 3,000
: 3,000

SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 8 A 312 mOhms 20 V 2 V 12.7 nC - 55 C + 150 C 31.5 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 650V, 85mohm GaN FET in TOLL Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 2,000
Mult.: 2,000
: 2,000

650 V SuperGaN
Renesas Electronics GaN FETs 650V, 150mohm GaN FET in 8x8 PQFN Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 3,000
Mult.: 3,000
: 3,000

SMD/SMT PQFN-3 N-Channel 1 Channel 650 V 16 A 180 mOhms 20 V 4.8 V 8 nC - 55 C + 150 C 52 W Enhancement SuperGaN GaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 3,000
Mult.: 3,000
: 3,000

SMD/SMT PQFN-8 N-Channel 1 Channel 700 V 312 mOhms 12 V 2.5 V 5.4 nC - 55 C + 150 C 31.2 W SuperGaN GaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in TO220 Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 1
Mult.: 1

SMD/SMT PQFN-8 N-Channel 1 Channel 700 V 312 mOhms 12 V 2.5 V 5.4 nC - 55 C + 150 C 31.2 W SuperGaN GaN
Renesas Electronics TP65H065G4PLSGB-TR
Renesas Electronics GaN FETs 650V, 65mohm GaN FET in 8x8 PQFN IP Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 3,000
Mult.: 3,000
: 3,000

650 V SuperGaN
Renesas Electronics TP65H070G4LSGBA-TR
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 3,000
Mult.: 3,000
: 3,000

650 V SuperGaN
Renesas Electronics TP65H030G4PYS
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TO247-4L Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 960
Mult.: 240

TO-247-4L 650 V SuperGaN
Renesas Electronics TP65H050G4PQS-TR
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TOLL Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 2,000
Mult.: 2,000
: 2,000

650 V SuperGaN
Renesas Electronics TP65H050G4PRS-TR
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TOLT Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 1,300
Mult.: 1,300
: 1,300

650 V SuperGaN
Renesas Electronics TP65H050G4PWS
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TO247-3L Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 960
Mult.: 240

TO-247-3L 650 V SuperGaN
Renesas Electronics TP65H050G4PYS
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TO247-4L Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 960
Mult.: 240

TO-247-4L 650 V SuperGaN
Renesas Electronics TP65H065G4PLSG-TR
Renesas Electronics GaN FETs 650V, 65mohm GaN FET in 8x8 PQFN PP Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 3,000
Mult.: 3,000
: 3,000

650 V SuperGaN
Renesas Electronics TP65H065G4PPS
Renesas Electronics GaN FETs 650V, 65mohm GaN FET in TO-220 Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 1,250
Mult.: 1,250

650 V SuperGaN
Renesas Electronics TP65H065G4PQS-TR
Renesas Electronics GaN FETs 650V, 65mohm GaN FET in TOLL Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 2,000
Mult.: 2,000
: 2,000

650 V SuperGaN
Renesas Electronics TP65H065G4PRS-TR
Renesas Electronics GaN FETs 650V, 65mohm GaN FET in TOLT Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 1,300
Mult.: 1,300
: 1,300

650 V SuperGaN