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NTH4L060N065SC1

Name: onsemi NTH4L060N065SC1
Brand: onsemi
SKU: 863-NTH4L060N065SC1
Price: 489.52 PHP
Availability: InStock

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Mouser #:

863-NTH4L060N065SC1

Mfr. #:

NTH4L060N065SC1

Mfr.:

onsemi

Paglalarawan:

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L

Datasheet:

NTH4L060N065SC1 Datasheet

ECAD Model:

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May Stock: 430

Stock:: 430 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 17 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱489.52	₱489.52
	₱360.18	₱3,601.80
	₱350.32	₱35,032.00
	₱338.14	₱152,163.00
	₱336.98	₱303,282.00
2,700	Quote

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-4
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	33 A
Rds On - Drain-Source Resistance:	70 mOhms
Vgs - Gate-Source Voltage:	- 18 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	74 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	88 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	EliteSiC
Brand:	onsemi
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	11 ns
Forward Transconductance - Min:	12 S
Packaging:	Tube
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	14 ns
Series:	NTH4L060N065SC1
Dami ng Pack ng Pabrika:	450
Subcategory:	Transistors
Teknolohiya:	SiC
Karaniwang Tagal ng Delay ng Pag-off:	24 ns
Karaniwang Tagal ng Delay ng Pag-on:	11 ns

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Mga Piniling Attribute: 0

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Datasheet

NTH4L060N065SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NTH4L060N065SC1 Silicon Carbide (SiC) MOSFET

onsemi NTH4L060N065SC1 Silicon Carbide (SiC) MOSFET provides superior switching performance and higher reliability. The MOSFET has low ON resistance and its compact chip size ensures low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.