TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (QC), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.

Mga Resulta: 10
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Kumpigurasyon If - Forward Current Vrrm - Repetitive Reverse Voltage Vf - Forward Voltage Ifsm - Forward Surge Current Ir - Reverse Current Maximum na Operating Temperature Packaging
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 15A RDL SIC SKY 2,719May Stock
Min.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 15 A 1.2 kV 1.6 V 62 A 300 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 5A RDL SIC SKY 3,968May Stock
Min.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 5 A 1.2 kV 1.6 V 23 A 100 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 15A, 2nd Gen 6,417May Stock
Min.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 15 A 650 V 1.55 V 52 A 300 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 8A, 2nd Gen 1,701May Stock
Min.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 8 A 650 V 1.55 V 30 A 160 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 10A RDL SIC SKY 752May Stock
Min.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 10 A 1.2 kV 1.6 V 42 A 200 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 20A RDL SIC SKY 1,391May Stock
Min.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 20 A 1.2 kV 1.6 V 79 A 400 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 10A, 2nd Gen 770May Stock
Min.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 10 A 650 V 1.55 V 38 A 200 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 12A, 2nd Gen 830May Stock
Min.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 12 A 650 V 1.55 V 43 A 240 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 20A, 2nd Gen 11May Stock
Min.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 20 A 650 V 1.55 V 68 A 400 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 6A, 2nd Gen Lead-Time para sa Hindi Naka-stock 21 (na) Linggo

Through Hole TO-220ACG-2 Single 6 A 650 V 1.55 V 23 A 120 uA + 175 C Tube