NGTB25N/NGTB40N Isolated Gate Bipolar Transistors

onsemi NGTB25N and NGTB40N Isolated Gate Bipolar Transistors (IGBT) feature a robust and cost-effective Ultra Field Stop Trench construction. Low switch losses and an ultra-fast recovery diode make them ideal for high frequency solar, UPS and inverter welder applications. Incorporated into these onsemi devices is a soft and fast co-packaged free wheeling diode with a low forward voltage.

Mga Resulta: 2
Pumili Larawan # ng Piyesa
 Mfr.
Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami.
Dami RoHS ECAD Model Teknolohiya
Package / Case
Isitilo ng Mounting
Kumpigurasyon
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum na Gate Emitter Voltage
Tuloy-tuloy na Collector Current sa 25 C
Pd - Power Dissipation
Minimum na Operating Temperature
Maximum na Operating Temperature
Series
Packaging

onsemi IGBTs IGBT 1200V 40A FS3 SOLAR/
Datasheet
1,141May Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.7 V - 20 V, 20 V 80 A 454 W - 55 C + 175 C NGTB40N120FL3 Tube

onsemi IGBTs IGBT 1200V 25A FS3 SOLAR/
Datasheet
276,120Available ang Stock ng Pabrika
Available ang Higit Pang Impormasyon
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.7 V - 20 V, 20 V 50 A 349 W - 55 C + 175 C NGTB25N120FL3 Tube