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NVHL110N65S3F

Name: onsemi NVHL110N65S3F
Brand: onsemi
SKU: 863-NVHL110N65S3F
Price: 362.5 PHP
Availability: InStock

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Mouser #:

863-NVHL110N65S3F

Mfr. #:

NVHL110N65S3F

Mfr.:

onsemi

Paglalarawan:

MOSFETs SUPERFET3 650V FRFET110M

Datasheet:

NVHL110N65S3F Datasheet

ECAD Model:

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May Stock: 708

Stock:: 708 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 16 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱362.50	₱362.50
	₱225.62	₱2,256.20
	₱182.70	₱18,270.00
	₱176.32	₱79,344.00
	₱169.94	₱152,946.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga MOSFET
RoHS:
REACH - SVHC:
Teknolohiya:	Si
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	58 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	240 W
Channel Mode:	Enhancement
Kuwalipikasyon:	AEC-Q101
Pangalang pangkalakal:	SuperFET III
Packaging:	Tube
Brand:	onsemi
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	16 ns
Forward Transconductance - Min:	17 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	32 ns
Series:	SuperFET3
Dami ng Pack ng Pabrika:	450
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	61 ns
Karaniwang Tagal ng Delay ng Pag-on:	29 ns
Timbang ng Unit:	6 g

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Mga Piniling Attribute: 0

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Datasheet

NVHL110N65S3F Datasheet

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

NVHL110N65S3F 650V 30A SUPERFET® III Power MOSFET

onsemi NVHL110N65S3F 650V 30A SUPERFET® III Power MOSFET is a high-voltage AEC-Q101 qualified Super-Junction (SJ) MOSFET utilizing Charge Balance technology for outstanding low on-resistance and low gate charge performance. Charge Balance technology minimizes conduction loss, providing superior switching performance and enabling the ability to withstand extreme dV/dt rates. The NVHL110N65S3F SUPERFET III MOSFET is ideal for power systems requiring miniaturization and high efficiency. The NVHL110N65S3F also features optimized reverse recovery body diode performance, resulting in fewer required additional components and improved system reliability.

SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.