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LSIC1MO170E0750

Name: IXYS LSIC1MO170E0750
Brand: IXYS
SKU: 576-LSIC1MO170E0750
Price: 481.4 PHP
Availability: InStock

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Mouser #:

576-LSIC1MO170E0750

Mfr. #:

LSIC1MO170E0750

Mfr.:

IXYS

Paglalarawan:

SiC MOSFETs TO247 1.7KV 4.4A N-CH SIC

Datasheet:

LSIC1MO170E0750 Datasheet (PDF)

ECAD Model:

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May Stock: 1,927

Stock:: 1,927 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 29 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱481.40	₱481.40
	₱282.46	₱2,824.60
	₱240.12	₱24,012.00
	₱239.54	₱107,793.00
10,350	Quote

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	IXYS
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	6.2 A
Rds On - Drain-Source Resistance:	1 Ohms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	13 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	60 W
Channel Mode:	Enhancement
Brand:	IXYS
Packaging:	Tube
Uri ng Produkto:	SiC MOSFETS
Series:	LSIC1MO
Dami ng Pack ng Pabrika:	450
Subcategory:	Transistors
Teknolohiya:	SiC

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Datasheet

LSIC1MO170E0750 Datasheet (PDF)

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CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

LSIC1MO170E0750 N-Channel SiC MOSFET

IXYS LSIC1MO170E0750 is a 750mΩ N-channel Silicon Carbide (SiC) MOSFET optimized for high-frequency and high-efficiency applications. The low gate resistance and ultra-low on-resistance make it suitable for high-frequency switching applications. This device features extremely low gate charge and output capacitance, as well as normally-off operations at all temperatures. The IXYS LSIC1MO170E0750 is suitable for a variety of applications that utilize high-frequency switching, such as switch-mode power supplies, solar inverters, UPS systems, high voltage DC-DC converters, and more.

SiC MOSFETs

Littelfuse SiC MOSFETs are optimized for high-frequency, high-efficiency applications. These robust SiC MOSFETs offer low gate charges, low output capacitance, and low gate resistance for high-frequency switching. These devices also feature extremely low drain-source on-state resistance. The low gate charge and on-resistance of these MOSFETs translate into lower conduction and switching losses, respectively. Littelfuse offers in-house designed, developed, and manufactured SiC MOSFETs with extremely low gate charge and output capacitance, industry-leading performance, and ruggedness at all temperatures. Littelfuse SiC MOSFETs are available in a range of varieties, including 1200V in 80mΩ, 120mΩ, and 160mΩ versions.