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NTBG023N065M3S

Name: onsemi NTBG023N065M3S
Brand: onsemi
SKU: 863-NTBG023N065M3S
Price: 662.94 PHP
Availability: InStock

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Mouser #:

863-NTBG023N065M3S

Mfr. #:

NTBG023N065M3S

Mfr.:

onsemi

Paglalarawan:

SiC MOSFETs SIC MOS D2PAK-7L 23MOHM 650V M3S

Lifecycle:

Bagong Produkto:

Bago mula sa manufacturer na ito.

Datasheet:

NTBG023N065M3S Datasheet

ECAD Model:

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May Stock: 680

Stock:: 680 Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 20 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱662.94	₱662.94
	₱459.94	₱4,599.40
	₱389.18	₱38,918.00
Buo Reel (Mag-order sa multiple ng 800)
	₱363.66	₱290,928.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	D2PAK-7
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	33 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	69 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	263 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	EliteSiC
Brand:	onsemi
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	9.6 ns
Packaging:	Reel
Packaging:	Cut Tape
Produkto:	SiC MOSFETS
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	15 ns
Series:	NTBG023N065M3S
Dami ng Pack ng Pabrika:	800
Subcategory:	Transistors
Teknolohiya:	SiC
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	35 ns
Karaniwang Tagal ng Delay ng Pag-on:	11 ns

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Mga Piniling Attribute: 0

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Datasheet

NTBG023N065M3S Datasheet

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

NTBG023N065M3S 23mΩ EliteSiC MOSFET

onsemi NTBG023N065M3S 23mΩ EliteSiC MOSFET offers an M3S planar technology for fast-switching applications in a D2PAK-7L package. This MOSFET features 650V drain-to-source voltage, 40A continuous drain current, 263W power dissipation, and 216A pulsed drain current. The NTBG023N065M3S MOSFET integrates an ultra-low gate charge and high-speed switching MOSFET with low capacitance (Coss = 153pF). This MOSFET operates at -55°C to 175°C temperature range and is 100% avalanche-tested. The NTBG023N065M3S MOSFET is Halide-free and RoHS compliant with a 7a exemption. Typical applications include Switching Mode Power Supplies (SMPS), solar inverters, UPS, energy storage, and EV charging infrastructure.

NTBG025N065SC1 19mohm Silicon Carbide MOSFET

onsemi NTBG025N065SC1 19mohm Silicon Carbide MOSFET is housed in a D2PAK-7L package and designed to be fast and rugged. The onsemi NTBG025N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

Energy Storage Solutions

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