PWD5F60 High Density Power Driver

STMicroelectronics PWD5F60 High Density Power Driver combines gate drivers and four N-channel power MOSFETs in a dual half-bridge configuration into a single, compact System-in-Package (SiP) device. The integrated power MOSFETs have a drain-source on resistance, or RDS(ON), of 1.38Ω and a drain-source breakdown voltage of 600V. The high side for the embedded gate drivers can be easily supplied by the integrated bootstrap diode. The high integration of the PWD5F60 Power Driver enables efficient drive loads in space-constrained applications.

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STMicroelectronics Gate Drivers High-density power driver - High voltage full bridge with integrated comparators
Datasheet
330May Stock
Min.: 1
Mult.: 1

MOSFET Gate Drivers Half-Bridge SMD/SMT VFQFPN-15 2 Driver 2 Output 3.5 A 10 V 20 V - 40 C + 125 C PWD5F60 Tray
STMicroelectronics Gate Drivers High-density power driver - High voltage full bridge with integrated comparators
Datasheet
403May Stock
Min.: 1
Mult.: 1
Reel: 2,500

MOSFET Gate Drivers Half-Bridge SMD/SMT VFQFPN-15 2 Driver 2 Output 3.5 A 10 V 20 V - 40 C + 125 C PWD5F60 Reel, Cut Tape