Mga UF4C/SC 1200V Gen 4 SiC FET

Ang mga Qorvo UF4C/SC 1200V Gen 4 SiC FET ay mga high-performance series na naghahatid ng pinaka-best na Figures of Merit sa industriya. Bagay na bagay ang mga UF4C/SC 1200V Gen 4 SiC FET para sa mga mainstream na 800V bus architecture sa mga onboard charger na para sa mga EV, mga industrial battery charger, industrial power supply, renewable, energy storage, welding machine, UPS, at mga induction heating application. Available sa 23mΩ hanggang 70mΩ na mga option, ang Gen 4 series ay nakabatay sa unique na cascode configuration, kung saan ang high-performance na SiC JFET ay naka-co-packaged sa isang cascode optimized na Si-MOSFET para makagawa ng standard gate drive na SiC device. Ang feature na ito ay nagpapahintulot ng flexible na design nang hindi binabago ang gate drive voltage, kaya madaling mapapalitan ang mga Si IGBT, Si FET, SiC FET, o mga Si super-junction na device.

Mga Resulta: 11
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Pangalang pangkalakal
onsemi SiC MOSFETs 1200V/70MOSICFETG4TO247-4 390May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 27.5 A 91 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 217 W SiC FET
onsemi SiC MOSFETs 1200V/23MOSICFETG4TO24 728May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 53 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/53MOSICFETG4TO247-4 759May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 34 A 67 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 263 W SiC FET
onsemi SiC MOSFETs 1200V/53MOSICFETG4TO263-7 699May Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 34 A 53 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 250 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/70MOSICFETG4TO263-7 513May Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 25.7 A 72 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 183 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/30MOSICFETG4TO26 646May Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 56 A 39 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 341 W Enhancement SiC FET
onsemi SiC MOSFETs 1200V/53MOSICFETG4TO247-3 306May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 34 A 67 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 263 W SiC FET
onsemi SiC MOSFETs 1200V/70MOSICFETG4TO247-3 315May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 27.5 A 91 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 217 W SiC FET
onsemi SiC MOSFETs 1200V/30MOSICFETG4TO24 2May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 53 A 39 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 341 W Enhancement SiC FET
onsemi SiC MOSFETs UF4C120053B7S 200May Stock
Min.: 1
Mult.: 1

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 34 A 53 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 250 W Enhancement SiC FET
onsemi SiC MOSFETs UF4C120070B7S 200May Stock
Min.: 1
Mult.: 1

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 25.7 A 72 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 183 W Enhancement SiC FET