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IXFH46N65X2W

Name: IXYS IXFH46N65X2W
Brand: IXYS
SKU: 747-IXFH46N65X2W
Price: 593.92 PHP
Availability: InStock

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Mouser #:

747-IXFH46N65X2W

Mfr. #:

IXFH46N65X2W

Mfr.:

IXYS

Paglalarawan:

MOSFETs 650V 69mohm 46A X2-Class HiPerFET in TO-247

Lifecycle:

Bagong Produkto:

Bago mula sa manufacturer na ito.

Datasheet:

IXFH46N65X2W Datasheet (PDF)

ECAD Model:

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May Stock: 551

Stock:: 551 Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 29 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱593.92	₱593.92
	₱464.58	₱4,645.80
	₱386.86	₱46,423.20
	₱344.52	₱175,705.20
	₱306.82	₱312,956.40

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	IXYS
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	46 A
Rds On - Drain-Source Resistance:	69 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	5.5 V
Qg - Gate Charge:	90 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	660 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	12 ns
Forward Transconductance - Min:	24 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	21 ns
Dami ng Pack ng Pabrika:	30
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	53 ns
Karaniwang Tagal ng Delay ng Pag-on:	28 ns

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Datasheet

IXFH46N65X2W Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

IXFH46N65X2W Power MOSFET

IXYS IXFH46N65X2W Power MOSFET is a 650V, 69mΩ, X2 Class HiPerFET™ power MOSFET developed using the charge compensation principle and proprietary process technology. This N-channel power MOSFET exhibits low on-state resistance and low gate charges, along with superior dv/dt performance. The IXFH46N65X2W MOSFET features high power density, and the avalanche capability enhances the device's ruggedness. In addition to the fast soft-recovery body diode, the ultra-junction MOSFET helps to reduce switching losses and Electro-Magnetic Interference (EMI). The IXFH46N65X2W MOSFET is used in switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, robotics, and servo control applications.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.