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BSM300D12P2E001

Name: ROHM Semiconductor BSM300D12P2E001
Brand: ROHM Semiconductor
SKU: 755-BSM300D12P2E001
Price: 44679.72 PHP
Availability: InStock

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Mouser #:

755-BSM300D12P2E001

Mfr. #:

BSM300D12P2E001

Mfr.:

ROHM Semiconductor

Paglalarawan:

MOSFET Modules 300A SiC Power Module

Datasheet:

BSM300D12P2E001 Datasheet (PDF)

ECAD Model:

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May Stock: 3

Stock:: 3 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 27 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

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Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

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Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱44,679.72	₱44,679.72
	₱42,826.04	₱513,912.48

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	ROHM Semiconductor
Kategorya ng Produkto:	Mga MOSFET Module
RoHS:
Teknolohiya:	SiC
Isitilo ng Mounting:	Screw Mount
Package / Case:	Module
Polarity ng Transistor:	N-Channel
Dami ng Channel:	2 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	300 A
Vgs - Gate-Source Voltage:	- 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Minimum na Operating Temperature:	- 40 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.875 kW
Series:	BSMx
Packaging:	Bulk
Brand:	ROHM Semiconductor
Kumpigurasyon:	Dual
Tagal ng Pagbagsak:	65 ns
Taas:	15.4 mm
Haba:	152 mm
Uri ng Produkto:	MOSFET Modules
Tagal ng Pagtaas:	70 ns
Dami ng Pack ng Pabrika:	4
Subcategory:	Discrete and Power Modules
Uri:	SiC Power Module
Karaniwang Tagal ng Delay ng Pag-off:	250 ns
Karaniwang Tagal ng Delay ng Pag-on:	80 ns
Vr - Reverse Voltage:	1.2 kV
Lapad:	62 mm
Timbang ng Unit:	444.780 g

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Mga Piniling Attribute: 0

I-filter ang Dokumento:

Datasheet

BSM300D12P2E001 Datasheet (PDF)

Models

ThermalLink

Other

PCN

Product Change Notification (PDF)

Specification Sheets

SPICE Models

Technical Resources

Test/Quality Data

Constitution Material (PDF)

CNHTS:: 8504409100
CAHTS:: 8541590000
USHTS:: 8541590080
JPHTS:: 854159000
TARIC:: 8541590000
MXHTS:: 8541500100
BRHTS:: 85415020
ECCN:: EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

BSM300D12P2E001 SiC Power Module

ROHM Semiconductor BSM300D12P2E001 SiC Power Module is a half-bridge module consisting of a Silicon Carbide DMOSFET and a Silicon Carbide Schottky Barrier Diode. ROHM Semiconductor BSM300D12P2E001 SiC Power Module is designed for motor drives, inverter/converters, photovoltaics, energy harvesting, and induction heating equipment. It has low surge, low switching loss and high-speed switching are possible.

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.