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SCT4013DW7TL

Name: ROHM Semiconductor SCT4013DW7TL
Brand: ROHM Semiconductor
SKU: 755-SCT4013DW7TL
Price: 1618.2 PHP
Availability: InStock

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Mouser #:

755-SCT4013DW7TL

Mfr. #:

SCT4013DW7TL

Mfr.:

ROHM Semiconductor

Paglalarawan:

SiC MOSFETs TO263 750V 98A N-CH SIC

Datasheet:

SCT4013DW7TL Datasheet

ECAD Model:

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May Stock: 344

Stock:: 344 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 27 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Matagal na lead time na iniulat sa produktong ito.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Packaging:

Buo Reel (Mag-order sa multiple ng 1000)

Cut Tape

MouseReel™ (+₱350.00)

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Cut Tape / MouseReel™ ^†
	₱1,618.20	₱1,618.20
	₱1,332.26	₱13,322.60
	₱1,310.22	₱131,022.00
Buo Reel (Mag-order sa multiple ng 1000)
	₱1,299.20	₱1,299,200.00

† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	ROHM Semiconductor
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	TO-263-7
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	98 A
Rds On - Drain-Source Resistance:	16.9 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	170 nC
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	267 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Pagsunod:	Done
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	17 ns
Forward Transconductance - Min:	32 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Produkto:	MOSFET's
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	32 ns
Dami ng Pack ng Pabrika:	1000
Subcategory:	Transistors
Teknolohiya:	SiC
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	82 ns
Karaniwang Tagal ng Delay ng Pag-on:	17 ns
Mga Alias ng # ng Piyesa :	SCT4013DW7

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Mga Piniling Attribute: 0

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Datasheet

SCT4013DW7TL Datasheet

Specification Sheets

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SCT4013DW7 N-Ch SiC Power MOSFET

ROHM Semiconductor SCT4013DW7 N-Ch SiC Power MOSFET is a 750V, 13mΩ low on-resistance MOSFET designed for fast switching. The SCT4013DW7 offers a fast reverse recovery, is easy to parallel, and is simple to drive. The ROHM SCT4013DW7 is ideal for solar inverters, induction heating, and motor drives.

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.