N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

Mga Resulta: 104
Pumili Larawan # ng Piyesa
 Mfr.
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Dami RoHS ECAD Model Teknolohiya
Isitilo ng Mounting
Package / Case
Polarity ng Transistor
Dami ng Channel
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum na Operating Temperature
Maximum na Operating Temperature
Pd - Power Dissipation
Channel Mode
Kuwalipikasyon
Pangalang pangkalakal
Packaging
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
1,000Inaasahan 7/21/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 214 mOhms - 20 V, 20 V 3 V 18 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs MOSFET_(20V 40V)
Datasheet
Lead-Time para sa Hindi Naka-stock 9 (na) Linggo
Min.: 7,000
Mult.: 7,000
Reel: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 80 A 3.4 mOhms - 20 V, 20 V 3 V 170 nC - 55 C + 175 C 300 W Enhancement AEC-Q101 Reel
Infineon Technologies MOSFETs LOW POWER_LEGACY
Datasheet
Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8.7 A 420 mOhms - 20 V, 20 V 3.5 V 31.5 nC - 55 C + 150 C 83.3 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs MOSFET_(75V 120V(
Datasheet
Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 1
Mult.: 1
Reel: 5,000

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