650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature advanced technology, meeting the demand for efficient energy applications. The Infineon Technologies 650V transistors feature a cutting-edge micro-pattern trench design for precise control and high performance. The design results in significant loss reduction, improved efficiency, and enhanced power density across various industries like string inverters, energy storage systems (ESS), EV charging, industrial UPS, and welding.

Mga Resulta: 28
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Package / Case Isitilo ng Mounting Kumpigurasyon Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Maximum na Gate Emitter Voltage Tuloy-tuloy na Collector Current sa 25 C Pd - Power Dissipation Minimum na Operating Temperature Maximum na Operating Temperature Series Packaging
Infineon Technologies IGBTs 1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 121May Stock
Min.: 1
Mult.: 1

Si IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package 207May Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
479Inaasahan 3/2/2026
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube