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BGAV1A10E6327XTSA1

Name: Infineon BGAV1A10E6327XTSA1
Brand: Infineon Technologies
SKU: 726-BGAV1A10E6327XTS
Price: 23.43 PHP
Availability: Discontinued

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Mouser #:

726-BGAV1A10E6327XTS

Mfr. #:

BGAV1A10E6327XTSA1

Mfr.:

Infineon Technologies

Paglalarawan:

RF Amplifier RF SILICON MMIC

Lifecycle:

NRND:

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Datasheet:

BGAV1A10E6327XTSA1 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Hindi Naka-stock

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Lead-Time ng Pabrika:: Humiling ng Quote sa Paghahatid

Ipasok ang Dami:

Minimum: 4500 Mga Multiple: 4500

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

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Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Buo Reel (Mag-order sa multiple ng 4500)
	₱23.43	₱105,435.00
	₱22.62	₱203,580.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	RF Amplifier
RoHS:
Frequency ng Pagpapatakbo:	3.4 GHz to 3.8 GHz
Supply Voltage ng Pagpapatakbo:	1.7 V to 1.9 V
Supply Current ng Pagpapatakbo:	5 mA
Gain:	22 dB
NF - Noise Figure:	1.3 dB
Uri:	Low Noise Amplifiers
Isitilo ng Mounting:	SMD/SMT
Package / Case:	ATSLP-10-3
Teknolohiya:	Si
P1dB - Compression Point:	3 dBm
OIP3 - Third Order Intercept:	32 dBm
Minimum na Operating Temperature:	- 30 C
Maximum na Operating Temperature:	+ 85 C
Packaging:	Reel
Brand:	Infineon Technologies
Input Return Loss:	13 dB
Isolation dB:	32 dB
Dami ng Channel:	1 Channel
Pd - Power Dissipation:	90 mW
Uri ng Produkto:	RF Amplifier
Dami ng Pack ng Pabrika:	4500
Subcategory:	Wireless & RF Integrated Circuits
Test Frequency:	3.5 GHz
Mga Alias ng # ng Piyesa :	BGA V1A10 E6327 SP001628074
Timbang ng Unit:	2.450 mg

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Datasheet

BGAV1A10E6327XTSA1 Datasheet (PDF)

Product Catalogs

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CNHTS:: 8542339000
CAHTS:: 8537109920
USHTS:: 8542330001
TARIC:: 8537109899
ECCN:: EAR99

BGAx1A10 LTE LNA with Gain Control

Infineon Technologies BGAx1A10 LTE Low Noise Amplifiers (LNA) with Gain Control are designed to significantly improve the data rate of LTE communications. These BGAx1A10 LNAs feature an integrated gain control, bypass function, high system flexibility, and a low noise figure. The bypass mode reduces current consumption, and the Mobile Industry Processor Interface (MIPI) control interface reduces the control lines to a minimum. The BGAx1A10 LNAs ensures high LTE data rates due to high gain feature and higher system flexibility due to integrated gain control.

Low Noise Amplifier (LNA) ICs

Infineon Technologies Low Noise Amplifier (LNA) ICs boost data rates and reception quality of wireless applications by utilizing a very low-power signal without significant signal-to-noise ratio degradation. The improved receiver sensitivity enhances user experiences and satisfies market requirements. These highly integrated, small-packaged devices come with ESD protection and low power consumption, which is ideal for battery-operated mobile devices. Users of 4G/5G, GPS, Mobile TV, Wi-Fi, and FM portable devices will enjoy high data-rate reception, fast/precise navigation, and smooth, high-quality streaming even in the worst reception conditions.