HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

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STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high-speed HB series IGBT
Datasheet
Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 600
Mult.: 600

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 650V 40A HSpd trench gate field-stop IGB
Datasheet
Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics STGB20H65DFB2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package
Datasheet
Lead-Time para sa Hindi Naka-stock 15 (na) Linggo
Min.: 1,000
Mult.: 1,000
Reel: 1,000

IGBT Transistors