TGS2355-SM

Qorvo
772-TGS2355-SM
TGS2355-SM

Mfr.:

Paglalarawan:
RF Switch ICs .5-6GHz SPDT 100 Watt GaN

ECAD Model:
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May Stock: 229

Stock:
229 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
12 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
LIBRENG Ipapadala ang Produktong Ito

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱12,450.28 ₱12,450.28
₱9,314.80 ₱93,148.00
500 Quote

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Qorvo
Kategorya ng Produkto: Mga RF Switch IC
RoHS:  
SPDT
500 MHz
6 GHz
1.1 dB
40 dB
- 40 C
+ 85 C
SMD/SMT
QFN-32
Si
TGS2355
Tray
Brand: Qorvo
Mataas na Control Voltage: - 48 V
Maselan sa Moisture: Yes
Dami ng Switch: Single
Supply Current ng Pagpapatakbo: 1 mA
Pd - Power Dissipation: 35 W
Uri ng Produkto: RF Switch ICs
Dami ng Pack ng Pabrika: 50
Subcategory: Wireless & RF Integrated Circuits
Mga Alias ng # ng Piyesa : TGS2355 1097064
Timbang ng Unit: 5.058 g
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Mga Piniling Attribute: 0

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399999
ECCN:
EAR99

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

TGS2355-SM High Power GaN Switch

Qorvo TGS2355-SM High Power GaN Switch is a single-pole, double-throw (SPDT) reflective switch that operates from 0.5GHz to 6.0GHz. Fabricated on Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25), the TGS2355-SM provides up to 100W input power handling with <1.1dB insertion loss over most of the operating band and greater than 40dB isolation. These qualities make the TGS2355-SM GaN Switch ideal for high-power switching applications across both defense and commercial platforms.