TGS2355

Qorvo
772-TGS2355
TGS2355

Mfr.:

Paglalarawan:
RF Switch ICs .5-6GHz SPDT 100 Watt GaN

ECAD Model:
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Availability

Stock:
Hindi Naka-stock
Lead-Time ng Pabrika:
12 (na) Linggo Tinatayang oras ng paggawa sa pabrika.
Minimum: 50   Mga Multiple: 50
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
LIBRENG Ipapadala ang Produktong Ito

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱8,570.08 ₱428,504.00
100 Quote

Alternatibong Packaging

Mfr. # ng Piyesa:
Packaging:
Tray
Availability:
May Stock
Presyo:
₱12,450.28
Min:
1

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Qorvo
Kategorya ng Produkto: Mga RF Switch IC
RoHS:  
SPDT
500 MHz
6 GHz
1.3 dB
40 dB
- 55 C
+ 150 C
SMD/SMT
Die
Si
TGS2355
Gel Pack
Brand: Qorvo
Mataas na Control Voltage: - 48 V
Dami ng Switch: Single
Supply Current ng Pagpapatakbo: 1 mA
Pd - Power Dissipation: 36.8 W
Uri ng Produkto: RF Switch ICs
Dami ng Pack ng Pabrika: 50
Subcategory: Wireless & RF Integrated Circuits
Mga Alias ng # ng Piyesa : 1097157
Timbang ng Unit: 1 g
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Mga Piniling Attribute: 0

                        
Qorvo Die products:

Mouser is not authorized to break pack on these products.

Please contact your Mouser Technical Representative for further
information.



5-0810-13

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

TGS2355 High Power GaN Switch

Qorvo TGS2355 High Power GaN Switch is a single-pole, double-throw (SPDT) reflective switch fabricated on Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25). Operating from 0.5GHz to 6.0GHz, the TGS2355 provides up to 100W input power handling with <1dB insertion over most of the operating band and greater than 40dB isolation.