NBT SRAMs

GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that utilize all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock.

Mga Resulta: 1,613
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Laki ng Memory Organisasyon Oras ng Pag-access Maximum na Clock Frequency Uri ng Interface Supply Voltage - Max Supply Voltage - Min Supply Current - Max Minimum na Operating Temperature Maximum na Operating Temperature Isitilo ng Mounting Package / Case Packaging
GSI Technology SRAM 2.5 or 3.3V 4M x 18 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 4 M x 18 5.5 ns 300 MHz Parallel 3.6 V 2.3 V 270 mA, 370 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 4M x 18 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 4 M x 18 5.5 ns 300 MHz Parallel 3.6 V 2.3 V 290 mA, 390 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 1.8/2.5V 4M x 18 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 4 M x 18 8 ns 167 MHz Parallel 2.7 V 1.7 V 215 mA, 260 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 1.8/2.5V 4M x 18 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 4 M x 18 7.5 ns 200 MHz Parallel 2.7 V 1.7 V 225 mA, 290 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 1.8/2.5V 4M x 18 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 4 M x 18 6.5 ns 250 MHz Parallel 2.7 V 1.7 V 250 mA, 335 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 36 72M Hindi Naka-stock
Min.: 1
Mult.: 1

72 Mbit 2 M x 36 8 ns 167 MHz Parallel 3.6 V 2.3 V 220 mA, 270 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 36 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 2 M x 36 8 ns 167 MHz Parallel 3.6 V 2.3 V 240 mA, 290 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 1.8/2.5V 2M x 36 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 2 M x 36 8 ns 167 MHz Parallel 2.7 V 1.7 V 220 mA, 270 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 36 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 2 M x 36 7.5 ns 200 MHz Parallel 3.6 V 2.3 V 230 mA, 310 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 36 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 2 M x 36 7.5 ns 200 MHz Parallel 3.6 V 2.3 V 250 mA, 330 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 1.8/2.5V 2M x 36 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 2 M x 36 7.5 ns 200 MHz Parallel 2.7 V 1.7 V 230 mA, 310 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 36 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 2 M x 36 6.5 ns 250 MHz Parallel 3.6 V 2.3 V 255 mA, 360 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 1.8/2.5V 2M x 36 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 2 M x 36 6.5 ns 250 MHz Parallel 2.7 V 1.7 V 255 mA, 360 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 36 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 2 M x 36 5.5 ns 300 MHz Parallel 3.6 V 2.3 V 300 mA, 420 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 36 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 2 M x 36 5.5 ns 300 MHz Parallel 3.6 V 2.3 V 320 mA, 440 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 1.8/2.5V 2M x 36 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 2 M x 36 8 ns 167 MHz Parallel 2.7 V 1.7 V 240 mA, 290 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 1.8/2.5V 2M x 36 72M Hindi Naka-stock
Min.: 18
Mult.: 18

72 Mbit 2 M x 36 7.5 ns 200 MHz Parallel 2.7 V 1.7 V 250 mA, 330 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 4M x 18 72M Hindi Naka-stock
Min.: 1
Mult.: 1
72 Mbit 4 M x 18 8 ns 167 MHz Parallel 3.6 V 2.3 V 215 mA, 260 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 1.8/2.5V 4M x 18 72M Hindi Naka-stock
Min.: 14
Mult.: 14
72 Mbit 4 M x 18 8 ns 167 MHz Parallel 2.7 V 1.7 V 215 mA, 260 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 4M x 18 72M Hindi Naka-stock
Min.: 14
Mult.: 14
72 Mbit 4 M x 18 7.5 ns 200 MHz Parallel 3.6 V 2.3 V 225 mA, 290 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 1.8/2.5V 4M x 18 72M Hindi Naka-stock
Min.: 14
Mult.: 14
72 Mbit 4 M x 18 7.5 ns 200 MHz Parallel 2.7 V 1.7 V 225 mA, 290 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 4M x 18 72M Hindi Naka-stock
Min.: 14
Mult.: 14
72 Mbit 4 M x 18 6.5 ns 250 MHz Parallel 3.6 V 2.3 V 250 mA, 335 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 1.8/2.5V 4M x 18 72M Hindi Naka-stock
Min.: 14
Mult.: 14
72 Mbit 4 M x 18 6.5 ns 250 MHz Parallel 2.7 V 1.7 V 250 mA, 335 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 4M x 18 72M
Hindi Naka-stock
Min.: 14
Mult.: 14
72 Mbit 4 M x 18 6.5 ns 250 MHz Parallel 3.6 V 2.3 V 270 mA, 355 mA - 55 C + 125 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 4M x 18 72M Hindi Naka-stock
Min.: 14
Mult.: 14
72 Mbit 4 M x 18 5.5 ns 300 MHz Parallel 3.6 V 2.3 V 290 mA, 390 mA - 40 C + 85 C SMD/SMT BGA-119 Tray