CUHS10F60,H3F

Toshiba
757-CUHS10F60H3F
CUHS10F60,H3F

Mfr.:

Paglalarawan:
Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF

ECAD Model:
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Availability

Stock:
0

Mabibili mo pa rin ang produktong ito para sa backorder.

Inoorder:
5,981
Inaasahan 3/2/2026
Lead-Time ng Pabrika:
14
(na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
Packaging:
Buo Reel (Mag-order sa multiple ng 3000)

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
Cut Tape / MouseReel™
₱14.50 ₱14.50
₱12.24 ₱122.40
₱8.18 ₱818.00
₱6.09 ₱3,045.00
₱5.34 ₱5,340.00
Buo Reel (Mag-order sa multiple ng 3000)
₱3.65 ₱10,950.00
₱3.48 ₱20,880.00
₱3.25 ₱29,250.00
₱3.19 ₱76,560.00
† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Toshiba
Kategorya ng Produkto: Schottky Mga Diode at Rectifier
RoHS:  
Single
Reel
Cut Tape
MouseReel
Brand: Toshiba
Uri ng Produkto: Schottky Diodes & Rectifiers
Dami ng Pack ng Pabrika: 3000
Subcategory: Diodes & Rectifiers
Timbang ng Unit: 5.400 mg
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Mga Piniling Attribute: 0

CNHTS:
8541100000
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

CUHS10F60 Schottky Barrier Diode

Toshiba CUHS10F60 Schottky Barrier Diode (SBD) is designed for high-speed switching applications with high breakdown voltage and low reverse current. This SBD provides a maximum reverse voltage of 60V and an average rectified current of 1A. The CUHS10F60 diode features a storage temperature range from -55°C to +150°C and a maximum junction temperature of +150°C. The Toshiba CUHS10F60 SBD also features a reverse leakage current of 0.04mA when the reverse voltage is 60V.

CUHSx Schottky Barrier Diodes

Toshiba CUHSx Schottky Barrier Diodes (SBDs) are suitable for rectifying power supply circuits and protecting reverse currents. These diodes are high-speed switching devices that incorporate Si technology and use a US2H package to achieve low-thermal resistance. These SBDs offer a reverse leakage greater than other types of diodes making them more susceptible to thermal runaway under high-temperature and high-voltage conditions. To improve the efficiency of power supply use, these SBDs are required to have low forward voltage and low reverse current. The DC-DC boost converter ICs are used in voltage-boosting circuits for driving LCD backlight LEDs in portable devices like smartphones, tablets, and notebook PCs. In addition to the DC-DC converter circuits, Toshiba CUHSx Schottky Barrier Diodes are also used in applications such as motor driver circuits, MOSFET gate driver circuits, and freewheeling diodes.

Small Signal Schottky Barrier Diodes

Toshiba Small Signal Schottky Barrier Diodes come in a variety of packages, voltages, and current ratings to meet a variety of design requirements. Voltages range from 10V to 60V with current ratings from 0.05A to 2A. Toshiba Small Signal Schottky Barrier Diodes feature high-speed switching and a low leakage current.