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SCT4045DWAHRTL

Name: ROHM Semiconductor SCT4045DWAHRTL
Brand: ROHM Semiconductor
SKU: 755-SCT4045DWAHRTL
Price: 746.63 PHP
Availability: InStock

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Mouser #:

755-SCT4045DWAHRTL

Mfr. #:

SCT4045DWAHRTL

Mfr.:

ROHM Semiconductor

Paglalarawan:

SiC MOSFETs TO263 750V 31A N-CH SIC

Datasheet:

SCT4045DWAHRTL Datasheet

ECAD Model:

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May Stock: 1,996

Stock:: 1,996 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 27 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱746.63	₱746.63
	₱517.79	₱5,177.90
	₱409.20	₱40,920.00
Buo Reel (Mag-order sa multiple ng 1000)
	₱387.12	₱387,120.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	ROHM Semiconductor
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	TO-263-7
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	31 A
Rds On - Drain-Source Resistance:	59 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	63 nC
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	93 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	10 ns
Forward Transconductance - Min:	9.3 S
Packaging:	Reel
Packaging:	Cut Tape
Produkto:	SiC MOSFETS
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	16 ns
Dami ng Pack ng Pabrika:	1000
Subcategory:	Transistors
Teknolohiya:	SiC
Uri ng Transistor:	1 N-Channel
Uri:	Power MOSFET
Karaniwang Tagal ng Delay ng Pag-off:	27 ns
Karaniwang Tagal ng Delay ng Pag-on:	5.1 ns

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Datasheet

SCT4045DWAHRTL Datasheet

Specification Sheets

Datasheet - Chinese (English language)

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Mga Kodigo sa Pagsunod

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Mga Klasipikasyon ng Pinagmulan

Bansang Pinagmulan:: Thailand
Bansang Pinagmulan ng Pag-assemble:: Hindi available
Bansa ng Diffusion:: Hindi available

Ang bansa ay maaaring magbago sa oras ng pagpapadala.

SCT4045DWAHR AEC-Q101 N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4045DWAHR AEC-Q101 N-Channel Silicon Carbide (SiC) Power MOSFET is an automotive-grade device engineered for high-efficiency and high-reliability applications in harsh environments. With a drain-source voltage rating of 750V and a continuous drain current of 31A (at +25°C per chip), this dual MOSFET device offers a typical on-resistance of just 45mΩ per channel, enabling reduced conduction losses and improved thermal performance. Packaged in a compact TO-263-7LA configuration, the ROHM SCT4045DWAHR supports high-density designs and efficient thermal management.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.