TGF2965-SM GaN RF Input-Matched Transistor

Qorvo TGF2965-SM GaN RF Input-Matched Transistor is a 6W (P3dB), 50Ω-input matched discrete GaN (Gallium-Nitride) on SiC (Silicon Carbide) HEMT (High-Electron Mobility Transistor) which operates from 0.03GHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance. The output can be matched on board to optimize power and efficiency for any region within the band.

Mga Resulta: 2
Pumili Larawan # ng Piyesa
 Mfr.
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Dami RoHS ECAD Model Isitilo ng Mounting
Package / Case
Polarity ng Transistor
Dami ng Channel
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Vgs - Gate-Source Voltage
Minimum na Operating Temperature
Maximum na Operating Temperature
Pd - Power Dissipation
Qorvo GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
Datasheet
100May Stock
Min.: 1
Mult.: 1

SMD/SMT QFN-16 P-Channel 32 V 600 mA 7.5 W
Qorvo GaN FETs .03-3GHz,5W,32V,50Ohm GaN RF I/P-Mtch T
Datasheet
Lead-Time para sa Hindi Naka-stock 12 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SMD/SMT QFN-16 N-Channel 1 Channel 32 V 600 mA - 7 V, + 2 V - 40 C + 85 C 7.5 W