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SCT4018KRC15

Name: ROHM Semiconductor SCT4018KRC15
Brand: ROHM Semiconductor
SKU: 755-SCT4018KRC15
Price: 2056.68 PHP
Availability: InStock

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Mouser #:

755-SCT4018KRC15

Mfr. #:

SCT4018KRC15

Mfr.:

ROHM Semiconductor

Paglalarawan:

SiC MOSFETs TO247 1.2KV 81A N-CH SIC

Datasheet:

SCT4018KRC15 Datasheet

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May Stock: 6

Stock:: 6

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Inoorder:: 450

Inaasahan 6/18/2026
Lead-Time ng Pabrika:: 27

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Ipasok ang Dami:

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Presyo ng Unit:

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Ext. Presyo:

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Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱2,056.68	₱2,056.68
	₱1,531.20	₱15,312.00
	₱1,530.62	₱688,779.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	ROHM Semiconductor
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-4
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	81 A
Rds On - Drain-Source Resistance:	23.4 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	170 nC
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	312 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	11 ns
Forward Transconductance - Min:	22 S
Packaging:	Tube
Produkto:	MOSFET's
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	21 ns
Dami ng Pack ng Pabrika:	450
Subcategory:	Transistors
Teknolohiya:	SiC
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	50 ns
Karaniwang Tagal ng Delay ng Pag-on:	13 ns
Mga Alias ng # ng Piyesa :	SCT4018KR

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Datasheet

SCT4018KRC15 Datasheet

Specification Sheets

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

SCT4018KR N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4018KR N-Channel Silicon Carbide (SiC) Power MOSFET is a robust device optimized for high-efficiency power conversion in demanding applications. With a drain-source voltage rating of 1200V and a continuous drain current of 81A (at +25°C), the ROHM SCT4018KR delivers excellent performance in high-voltage environments. The device features a low typical on-resistance of 18mΩ and supports fast switching speeds, which significantly reduce switching losses and improve overall system efficiency. Housed in a TO-247-4L package, the SCT4018KR is well-suited for use in industrial power supplies, solar inverters, and motor drives. Leveraging the advantages of SiC technology, the SCT4018KR MOSFET offers superior thermal conductivity, high-temperature operation, and enhanced reliability, making it ideal for compact, high-performance power systems.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.