Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (RDS(ON), ultra-low gate charge (Qg), and low (Qg) x RDS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Qg and Qoss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).

Mga Resulta: 103
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Kuwalipikasyon Pangalang pangkalakal Packaging
onsemi MOSFETs T8 80V LL NFET Lead-Time 19 (na) Linggo
Min.: 1
Mult.: 1
Reel: 1,500
Si SMD/SMT SO-8FL-4 N-Channel 1 Channel 80 V 224 A 1.9 mOhms - 20 V, 20 V 2 V 112 nC - 55 C + 175 C 214 W Enhancement Reel, Cut Tape
onsemi MOSFETs TRENCH 8 80V NFET Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 1
Mult.: 1
Reel: 1,500

Si SMD/SMT SO-8FL-4 N-Channel 1 Channel 80 V 123 A 3.7 mOhms - 20 V, 20 V 2 V 46 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
onsemi MOSFETs TRENCH 8 80V NFET Lead-Time para sa Hindi Naka-stock 19 (na) Linggo
Min.: 1
Mult.: 1
Reel: 1,500
Si SMD/SMT WDFN-8 N-Channel 1 Channel 80 V 48 A 14.5 mOhms - 20 V, 20 V 2 V 13 nC - 55 C + 175 C 68 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel