Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

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STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGB
Datasheet
209May Stock
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics MOSFETs N-Ch 600 V 0.168 Ohm 18 A MDmesh M2
Datasheet
255May Stock
Min.: 1
Mult.: 1

MOSFETs Si Through Hole TO-262-3
STMicroelectronics MOSFETs N-CH 950V 2Ohm typ 3.5A Zener-protected
Datasheet
461May Stock
Min.: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in an IPAK package
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132May Stock
Min.: 1
Mult.: 1

MOSFETs Si Through Hole TO-251-3
STMicroelectronics MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
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127May Stock
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Mult.: 1

MOSFETs Si Through Hole TO-251-3

STMicroelectronics IGBTs Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Datasheet
591Inaasahan 4/1/2026
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Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics MOSFETs N-Ch 650V 0.098 Ohm 29 A MDmesh M5
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Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 1,000
Mult.: 1,000
Reel: 1,000

MOSFETs Si SMD/SMT D2PAK-3 (TO-263-3)
STMicroelectronics MOSFETs N-CH 800V 2.1Ohm 3A Zener-protected
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Reel: 2,500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3)
STMicroelectronics MOSFETs N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package
Datasheet
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Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3)
STMicroelectronics MOSFETs N-Ch 650V 0.098 Ohm 29A MDMesh M5 MOS
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a TO-220FP packag
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics IGBTs 650V 60A Trench Gate Field-Stop IGBT
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Min.: 600
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 600
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IGBT Transistors Si Through Hole
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 600
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IGBT Transistors Si Through Hole
STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 lo
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Min.: 600
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 650V 40A HSpd trench gate field-stop IGB
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Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 600
Mult.: 300

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics MOSFETs N-CH 80V 17mOhm 180A STripFET VII
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Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 1,000
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MOSFETs Si SMD/SMT H2PAK-2
STMicroelectronics MOSFETs N-Ch 650 V 0.075 Ohm 22.5 A Mdmesh
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Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 3,000
Mult.: 3,000
Reel: 3,000

MOSFETs Si SMD/SMT PowerFLAT-8x8-HV-5
STMicroelectronics MOSFETs N-Ch 650V 0.43 Ohm 9A MDmeshV 710V
Datasheet
Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 1,000
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220 package
Datasheet
Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 1,000
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package
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Min.: 1,000
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MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs N-Ch 800V .95Ohm 6A MDmesh K5
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Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 1,000
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MOSFETs Si Through Hole TO-220-3

STMicroelectronics MOSFETs N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-247 package
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Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 600
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MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFETs N-Ch 900V 0.25 Ohm 18.5A MDmesh K5
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 600
Mult.: 600

MOSFETs Si Through Hole TO-247-3