1200V Dual IGBT Modules

Infineon 1200V, Dual IGBT Modules, are EconoDUAL™ 3 1200V, 900A dual TRENCHSTOP™ IGBT7 Modules with emitter-controlled 7 diodes, NTC, and PressFIT contact technology. The IGBT Modules offer a higher inverter output current for the same frame size and avoidance of paralleling. The Infineon 1200V, Dual IGBT Modules, provide an easy and reliable assembly with high inter-connection reliability.

Mga Resulta: 11
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Produkto Kumpigurasyon Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Tuloy-tuloy na Collector Current sa 25 C Gate-Emitter Leakage Current Pd - Power Dissipation Minimum na Operating Temperature Maximum na Operating Temperature Packaging
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 6May Stock
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 890 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 450 A dual IGBT module 17May Stock
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 450 A 100 nA - 40 C + 175 C Tray
Infineon Technologies FF450R07ME4B11BPSA1
Infineon Technologies IGBT Modules 650 V, 450 A dual IGBT module 9May Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 650 V 1.55 V 560 A 100 nA 1.45 kW - 40 C + 150 C Tray
Infineon Technologies IGBT Modules MEDIUM POWER 62MM 20May Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.75 V 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules MEDIUM POWER 62MM 12May Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.75 V 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 600 A dual IGBT module 19May Stock
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.75 V 995 A 400 nA 4.05 kW - 40 C + 150 C Tray
Infineon Technologies IGBT Modules 1200 V, 600 A dual IGBT Module 12May Stock
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.75 V 600 A 400 nA - 40 C + 150 C Tray
Infineon Technologies IGBT Modules 1200 V, 600 A dual IGBT module 18May Stock
20Inaasahan 5/6/2026
Min.: 1
Mult.: 1

Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 10May Stock
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 900 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 750 A dual IGBT module Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 10
Mult.: 10

IGBT Silicon Modules Dual 1.2 kV 1.5 V 750 A 100 nA - 40 C + 175 C Tray
Infineon Technologies FP100R12N3T7BPSA1
Infineon Technologies IGBT Modules 1200 V, 100 A PIM IGBT module Lead-Time para sa Hindi Naka-stock 12 (na) Linggo
Min.: 1
Mult.: 1

Tray