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TP65H070G4RS-TR

Name: Renesas Electronics TP65H070G4RS-TR
Brand: Renesas Electronics
SKU: 227-TP65H070G4RS-TR
Price: 462.26 PHP
Availability: InStock

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Mouser #:

227-TP65H070G4RS-TR

Mfr. #:

TP65H070G4RS-TR

Mfr.:

Renesas Electronics

Paglalarawan:

GaN FETs 650V, 70mohm GaN FET in TOLT

Lifecycle:

Bago Sa Mouser

Datasheet:

TP65H070G4RS-TR Datasheet

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May Stock: 1,696

Stock:: 1,696 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 16 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱462.26	₱462.26
	₱314.36	₱3,143.60
	₱242.44	₱24,244.00
Buo Reel (Mag-order sa multiple ng 1300)
	₱197.78	₱257,114.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Renesas Electronics
Kategorya ng Produkto:	GaN FETs
RoHS:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	TOLT-16
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	29 A
Rds On - Drain-Source Resistance:	85 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	9 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	96 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	SuperGaN
Brand:	Renesas Electronics
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	7.2 ns
Maselan sa Moisture:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Uri ng Produkto:	GaN FETs
Tagal ng Pagtaas:	6.2 ns
Series:	Gen IV SuperGaN
Dami ng Pack ng Pabrika:	1300
Subcategory:	Transistors
Teknolohiya:	GaN
Karaniwang Tagal ng Delay ng Pag-off:	56 ns
Karaniwang Tagal ng Delay ng Pag-on:	43.4 ns

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Datasheet

TP65H070G4RS-TR Datasheet

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CNHTS:: 8541290000
ECCN:: EAR99

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

TP65H070G4RS 650V SuperGaN® FET in TOLT

Renesas Electronics TP65H070G4RS 650V SuperGaN^® FET in TOLT features an on-resistance R_DS(on) of 72mΩ typical in a top-side-cooled, surface-mount TOLT package that meets the JEDEC standard MO-332. The TOLT package offers thermal management flexibility, especially in systems that do not allow for conventional surface-mount devices with bottom-side cooling. The TP65H070G4RS is a normally-off device that combines low-voltage silicon MOSFET and high-voltage GaN HEMT technologies to deliver superior reliability and performance. The Gen IV SuperGaN platform leverages advanced epitaxial (epi) and patented design technologies to streamline manufacturability and enhance efficiency compared to silicon. It achieves this by reducing gate charge, crossover loss, output capacitance, and reverse recovery charge. Renesas Electronics TP65H070G4RS 650V SuperGaN TOLT FET is ideal for datacom, industrial, computing, and other applications.