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NVBG070N120M3S

Name: onsemi NVBG070N120M3S
Brand: onsemi
SKU: 863-NVBG070N120M3S
Price: 892.62 PHP
Availability: InStock

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Mouser #:

863-NVBG070N120M3S

Mfr. #:

NVBG070N120M3S

Mfr.:

onsemi

Paglalarawan:

SiC MOSFETs SIC MOS D2PAK-7L 70MOHM 1200V M3

Datasheet:

NVBG070N120M3S Datasheet

ECAD Model:

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May Stock: 1,559

Stock:: 1,559 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 19 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱892.62	₱892.62
	₱629.88	₱6,298.80
	₱573.04	₱57,304.00
Buo Reel (Mag-order sa multiple ng 800)
	₱572.46	₱457,968.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
REACH - SVHC:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	D2PAK-7
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	87 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.4 V
Qg - Gate Charge:	57 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	172 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	EliteSiC
Brand:	onsemi
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	8.8 ns
Forward Transconductance - Min:	12 S
Packaging:	Reel
Packaging:	Cut Tape
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	12 ns
Series:	NVBG070N120M3S
Dami ng Pack ng Pabrika:	800
Subcategory:	Transistors
Teknolohiya:	SiC
Karaniwang Tagal ng Delay ng Pag-off:	30 ns
Karaniwang Tagal ng Delay ng Pag-on:	11 ns

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Datasheet

NVBG070N120M3S Datasheet

PCN

Product Change Notification 2025-9-26 (PDF)

CNHTS:: 8541290000
ECCN:: EAR99

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.

NVBG070N120M3S Silicon Carbide (SiC) MOSFET

onsemi NVBG070N120M3S Silicon Carbide (SiC) MOSFET is a 1200V M3S planar EliteSiC MOSFET designed for fast switching applications. This MOSFET offers optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive. The NVBG070N120M3S SiC MOSFET features a 57nC ultra-low gate charge, 57pF high-speed switching with low capacitance, and 65mΩ typical drain-to-source ON resistance at V_GS=18V. This MOSFET is 100% Avalanche tested, AEC-Q101 qualified, and PPAP capable. The NVBG070N120M3S SiC MOSFET is available in a D2PAK-7L package and is Lead-free 2LI (on second-level interconnection) and RoHS compliant (with exemption 7a). Typical applications include automotive on-board chargers and DC/DC converters for EV/HEV.