Model BID Insulated Gate Bipolar Transistors

Bourns Model BID Insulated Gate Bipolar Transistors (IGBTs) combine technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a lower Collector-Emitter Saturation Voltage and fewer switching losses. The IGBTs feature a -55°C to +150°C operating temperature range and are available in TO-252, TO-247, and TO-247N packages. These thermally efficient components provide a lower thermal resistance making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.

Mga Resulta: 9
Pumili Larawan # ng Piyesa
 Mfr.
Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami.
Dami RoHS ECAD Model Teknolohiya
Package / Case
Isitilo ng Mounting
Kumpigurasyon
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum na Gate Emitter Voltage
Tuloy-tuloy na Collector Current sa 25 C
Pd - Power Dissipation
Minimum na Operating Temperature
Maximum na Operating Temperature
Series
Packaging
Bourns IGBTs IGBT Discrete 600V, 5A in TO-252
Datasheet
24,183May Stock
Available ang MouseReel
Min.: 1
Mult.: 1
Reel: 2,500

Si TO-252-3 SMD/SMT Single 600 V 1.5 V - 30 V, 30 V 10 A 82 W - 55 C + 150 C BID Reel, Cut Tape, MouseReel
Bourns IGBTs IGBT Discrete 600V, 20A in TO-247
Datasheet
6,978May Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.7 V - 20 V, 20 V 40 A 192 W - 55 C + 150 C BID Tube
Bourns IGBTs IGBT Discrete 650V, 50A in TO-247
Datasheet
2,233May Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 100 A 416 W - 55 C + 150 C BID Tube
Bourns IGBTs IGBT Discrete 600V, 30A in TO-247N
Datasheet
1,187May Stock
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 600 V 1.65 V - 20 V, 20 V 60 A 230 W - 55 C + 150 C BID Tube
Bourns IGBTs IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
Datasheet
5,811May Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V 20 V 150 A 394 W - 40 C + 175 C BID Tube
Bourns IGBTs IGBT Discrete 600V, 30A in TO-247
Datasheet
1,840May Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.65 V - 20 V, 20 V 60 A 230 W - 55 C + 150 C BID Tube
Bourns IGBTs IGBT Discrete 650V, 40A, Medium speed switching in TO-247-3L
Datasheet
2,830May Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V 20 V 80 A 230 W - 40 C + 175 C BID Tube
Bourns IGBTs IGBT Discrete 650V, 40A, High speed switching in TO-247-3L
Datasheet
2,967May Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V 20 V 80 A 300 W - 40 C + 175 C BID Tube
Bourns IGBTs IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L
Datasheet
2,783May Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.42 V 20 V 150 A 394 W - 40 C + 175 C BID Tube