MRF300 RF Power LDMOS Transistors

NXP Semiconductors MRF300 RF Power LDMOS Transistors feature unmatched input and output, allowing wide frequency range operation from 1.8MHz to 250MHz. NXP MRF300 LDMOS transistors offer two opposite pin-connection versions (A and B) to be used in a push-pull and two-up configuration for wideband performance. These transistors are housed in an industry-standard TO-247 package, offering flexibility and ease of mounting. The rugged transistors are suitable for high VSWR industrial, scientific, and medical (ISM) applications and broadcast, mobile radio, HF/VHF communications, and switch-mode power supplies.

Mga Resulta: 2
Pumili Larawan # ng Piyesa
 Mfr.
Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami.
Dami RoHS ECAD Model Polarity ng Transistor
Teknolohiya
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Frequency ng Pagpapatakbo
Gain
Output Power
Minimum na Operating Temperature
Maximum na Operating Temperature
Isitilo ng Mounting
Package / Case
Packaging
NXP Semiconductors RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
Datasheet
370May Stock
Min.: 1
Mult.: 1

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
Datasheet
Lead-Time para sa Hindi Naka-stock 10 (na) Linggo
Min.: 240
Mult.: 240

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube