Mga Resulta: 47
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Pangalang pangkalakal Packaging

Infineon Technologies MOSFETs HIGH POWER_NEW 625May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 63 A 26 mOhms - 20 V, 20 V 3.5 V 141 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 727May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 40 mOhms - 20 V, 20 V 3.5 V 109 nC - 55 C + 150 C 227 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 2,778May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 57 mOhms - 20 V, 20 V 3.5 V 67 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 402May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 68.5 A 41 mOhms - 20 V, 20 V 4 V 102 nC - 55 C + 150 C 500 W Enhancement Tube
Infineon Technologies MOSFETs LOW POWER_NEW 348May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6 A 237 mOhms - 20 V, 20 V 3.5 V 18 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 500May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 125 mOhms - 20 V, 20 V 3.5 V 36 nC - 55 C + 150 C 92 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 517May Stock
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 28 A 90 mOhms - 20 V, 20 V 4 V 42 nC - 55 C + 150 C 160 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs HIGH POWER_NEW 254May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 125 mOhms - 20 V, 20 V 3.5 V 36 nC - 55 C + 150 C 92 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 425May Stock
Min.: 1
Mult.: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 21 A 105 mOhms - 20 V, 20 V 4.5 V 42 nC - 55 C + 150 C 106 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_NEW 420May Stock
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 22 A 115 mOhms - 20 V, 20 V 3.5 V 42 nC - 40 C + 150 C 124 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs LOW POWER_NEW 712May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 237 mOhms - 20 V, 20 V 3.5 V 18 nC - 55 C + 150 C 52 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 300May Stock
Min.: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 650 V 50 A 41 mOhms - 20 V, 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 138May Stock
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 36 A 60 mOhms - 10 V, 10 V 4.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 480May Stock
1,680Inoorder
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 90 mOhms - 20 V, 20 V 3.5 V 51 nC - 55 C + 150 C 125 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 73May Stock
Min.: 1
Mult.: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 16 A 145 mOhms - 20 V, 20 V 4.5 V 31 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape

Infineon Technologies MOSFETs HIGH POWER_NEW 15May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 16 A 145 mOhms - 20 V, 20 V 3.5 V 31 nC - 55 C + 150 C 83 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
4,000Inaasahan 2/4/2027
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 67 A 35 mOhms - 20 V, 20 V 4 V 109 nC - 55 C + 150 C 351 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
500Inaasahan 1/28/2027
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 16 A 145 mOhms - 20 V, 20 V 3.5 V 31 nC - 55 C + 150 C 83 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 21 A 105 mOhms - 20 V, 20 V 3.5 V 42 nC - 55 C + 150 C 106 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time 8 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 14 A 144 mOhms - 20 V, 20 V 3.5 V 28 nC - 55 C + 150 C 75 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time 19 (na) Linggo
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 21 A 125 mOhms - 20 V, 20 V 4 V 8 nC - 55 C + 150 C 127 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 21 A 105 mOhms - 20 V, 20 V 3.5 V 42 nC - 55 C + 150 C 106 W Enhancement Tube