RJ1x10BBG Power MOSFETs

ROHM Semiconductor RJ1x10BBG Power MOSFETs are N-channel power MOSFETs featuring low on-resistance and a high power package. The RJ1G10BBG and RJ1L10BBG power MOSFETs have a drain-source voltage of 40V and 60V, a continuous drain current of ±280A and ±240A, respectively, and a power dissipation of 192W. The RJ1x10BBG power MOSFETs are RoHS compliant. These power MOSFETs feature lead-free plating, are halogen-free, and 100% Rg and UIS tested. The RJ1x10BBG power MOSFETs operate within the -55°C to 150°C temperature range. Typical applications include switching, motor drives, and DC/DC converters.

Mga Resulta: 2
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Packaging
ROHM Semiconductor MOSFETs Nch 40V 280A, TO-263AB, Power MOSFET 560May Stock
Min.: 1
Mult.: 1
Reel: 800
Si SMD/SMT TO-263AB-3 N-Channel 1 Channel 40 V 280 A 1.43 mOhms 20 V 2.5 V 210 nC - 55 C + 150 C 192 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFETs Nch 60V 240A, TO-263AB, Power MOSFET 156May Stock
Min.: 1
Mult.: 1
Reel: 800
Si SMD/SMT TO-263AB-3 N-Channel 1 Channel 60 V 240 A 1.85 mOhms 20 V 2.5 V 160 nC - 55 C + 150 C 192 W Enhancement Reel, Cut Tape