650V DTMOS-VI Superjunction MOSFETs

Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.

Mga Resulta: 7
Pumili Larawan # ng Piyesa
 Mfr.
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Dami RoHS ECAD Model Teknolohiya
Isitilo ng Mounting
Package / Case
Polarity ng Transistor
Dami ng Channel
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum na Operating Temperature
Maximum na Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
Toshiba MOSFETs MOSFET 650V 125mOhms DTMOS-VI
Datasheet
7,283May Stock
Available ang MouseReel
Min.: 1
Mult.: 1
Reel: 2,500

Si SMD/SMT DFN-8 N-Channel 1 Channel 650 V 24 A 125 mOhms - 30 V, 30 V 4 V 40 nC - 55 C + 150 C 190 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFETs MOSFET 650V 170mOhms DTMOS-VI
Datasheet
4,720May Stock
Available ang MouseReel
Min.: 1
Mult.: 1
Reel: 2,500

Si SMD/SMT DFN-8 N-Channel 1 Channel 650 V 18 A 170 mOhms - 30 V, 30 V 4 V 29 nC - 55 C + 150 C 150 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFETs MOSFET 650V 110mOhms DTMOS-VI
Datasheet
432May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 110 mOhms - 30 V, 30 V 4 V 40 nC - 55 C + 150 C 190 W Enhancement Tube
Toshiba MOSFETs MOSFET 650V 155mOhms DTMOS-VI
Datasheet
76May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 155 mOhms - 30 V, 30 V 4 V 23 nC - 55 C + 150 C 40 W Enhancement Tube
Toshiba MOSFETs MOSFET 650V 190mOhms DTMOS-VI
Datasheet
96May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 15 A 190 mOhms - 30 V, 30 V 4 V 25 nC - 55 C + 150 C 40 W Enhancement Tube
Toshiba MOSFETs MOSFET 650V 110mOhms DTMOS-VI
Datasheet
Lead-Time 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 110 mOhms - 30 V, 30 V 4 V 40 nC - 55 C + 150 C 45 W Enhancement Tube
Toshiba MOSFETs MOSFET 650V 210mOhms DTMOS-VI
Datasheet
Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

Si SMD/SMT DFN-8 N-Channel 1 Channel 650 V 15 A 210 mOhms - 30 V, 30 V 4 V 25 nC - 55 C + 150 C 130 W Enhancement Reel