Tila naka-disable ang JavaScript sa loob ng iyong browser. Hindi gagana ang ilang function sa page na ito maliban kung mag-log in ka.

Bumalik sa Mga Resulta ng Paghahanap

May Nakikitang Error?

CGHV96100F2

Name: MACOM CGHV96100F2
Brand: MACOM
SKU: 941-CGHV96100F2
Price: 82152.94 PHP
Availability: OutOfStock

Reference lang ang mga larawan
Tingnan ang Mga Ispesipikasyon ng Produkto

Mouser #:

941-CGHV96100F2

Mfr. #:

CGHV96100F2

Mfr.:

MACOM

Paglalarawan:

GaN FETs GaN HEMT 7.9-9.6GHz, 100 Watt

Datasheet:

CGHV96100F2 Datasheet (PDF)

ECAD Model:

I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

Higit Pang Impormasyon

Alamin pa ang tungkol sa MACOM CGHV96100F2

Alerto sa Pagpapadala:

Maaaring mangailangan ng karagdagang dokumentasyon ang produktong ito para ma-export sa United States.

Availability

Stock:: 0

Mabibili mo pa rin ang produktong ito para sa backorder.

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 26 (na) Linggo Tinatayang oras ng paggawa sa pabrika.

Matagal na lead time na iniulat sa produktong ito.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

LIBRENG Ipapadala ang Produktong Ito

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱82,152.94	₱82,152.94

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	MACOM
Kategorya ng Produkto:	GaN FETs
Mga Paghihigpit sa Pagpapadala:	Maaaring mangailangan ng karagdagang dokumentasyon ang produktong ito para ma-export sa United States.
RoHS:
Isitilo ng Mounting:	Screw Mount
Package / Case:	440210
Polarity ng Transistor:	N-Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	12 A
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Minimum na Operating Temperature:	- 40 C
Maximum na Operating Temperature:	+ 150 C
Brand:	MACOM
Kumpigurasyon:	Single
Kit sa Pag-develop:	CGHV96100F2-TB
Gain:	12.4 dB
Maximum na Operating Frequency:	9.6 GHz
Minimum na Operating Frequency:	7.9 GHz
Output Power:	131 W
Packaging:	Tray
Produkto:	GaN HEMTs
Uri ng Produkto:	GaN FETs
Dami ng Pack ng Pabrika:	10
Subcategory:	Transistors
Teknolohiya:	GaN
Uri ng Transistor:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V
Timbang ng Unit:	65.235 g

Nahanap na mga produkto:

Para maipakita ang mga katulad na produkto, pumili ng kahit na isang checkbox man lang

Pumili ng kahit isang checkbox sa itaas para magpakita ng katulad na produkto sa kategoryang ito.

Mga Piniling Attribute: 0

I-filter ang Dokumento:

Datasheet

CGHV96100F2 Datasheet (PDF)

PCN

Kailangang i-enable ang JavaScript para gumana ito.

CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: 3A001.b.3.b.2

CGHV96100F2 GaN HEMT

MACOM CGHV96100F2 Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) on silicon carbide (SiC) substrate is an internally matched (IM) FET that offers excellent power-added efficiency compared to other technologies. GaN provides superior properties to silicon or gallium arsenide (GaAs), including higher breakdown voltage, saturated electron drift velocity, and thermal conductivity. These CGHV96100F2 GaN HEMTs also offer greater power density and wider bandwidths than GaAs transistors. This MACOM IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.

X-Band GaN HEMTs & MMICs

MACOM X-Band Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) and Monolithic Microwave Integrated Circuits (MMICs) come with various solution platforms. That includes MMICs, internally matched GaN on SiC transistors (IM-FETs), and transistors. These multi-stage MMICs offer a variety of power levels, high gain, and high efficiency, while IM-FETs feature 50Ω building blocks in support of higher power systems. The transistors offer highly accurate modeling support that provides maximum flexibility to optimize amplifier design. The GaN has superior properties compared to silicon or gallium arsenide (GaAs), including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.